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US 9,147,410 B2Granted
Reader structure with canted pinning
AssigneeSeagate Technology LLC
InventorHarry S. Edelman
Life of this patent
Estimating the term…
Abstract
Implementations described and claimed herein provide a synthetic antiferromagnetic (SAF) layer with canted pinning, wherein a down-track direction facing surface of the SAF layer has edges that are substantially parallel to pinning direction of the SAF layer.
Claims18
An apparatus comprising:
- an antiferromagnetic (AFM) layer;
- a free layer (FL);
- and
- a synthetic antiferromagnetic (SAF) layer with canted pinning stacked in a down-track direction between the AFM layer and the FL, wherein a surface of the SAF layer that faces the down-track direction has a shape with edges that are substantially parallel to a pinning direction of the SAF layer, and wherein a surface of the FL that faces the down-track direction has a shape different than the SAF layer shape.
1 more element
A sensor stack, comprising:
- an antiferromagnetic (AFM) layer;
- a free layer (FL);
- and
- a synthetic antiferromagnetic (SAF) layer between the AFM layer and the FL, the AFM layer, SAF layer and FL stacked in a down-track direction, wherein a surface of the SAF layer that faces the down-track direction has a profile with at least one non-perpendicular angle, and a surface of the FL that faces the surface of the SAF layer has a profile with all perpendicular angles.
1 more element
A storage device comprising:
- a magnetic media;
- and
- a reader including a synthetic antiferromagnetic (SAF) layer and a free layer (FL), the FL having a shape different than a shape of the SAF layer, wherein an edge of the SAF layer away from an air-bearing surface (ABS) of the reader is substantially parallel to a pinning direction of the SAF layer.
Dependencies are inferred from the claim text.