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US 11,422,211 B2Granted
Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator
AssigneeTDK Corporation
InventorsKazuumi Inubushi, Katsuyuki Nakada
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Abstract
A stacked structure is positioned on a nonmagnetic metal layer. The stacked structure includes a ferromagnetic layer and an intermediate layer interposed between the nonmagnetic metal layer and the ferromagnetic layer. The intermediate layer includes a NiAlX alloy layer represented by Formula (1): Niγ1Alγ2Xγ3 . . . (1), [X indicates one or more elements selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and satisfies an expression of 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3)].
Claims38
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the nonmagnetic spacer layer includes:
- a nonmagnetic metal layer, and
- at least one of a first intermediate layer provided under the nonmagnetic metal layer and a second intermediate layer provided over the nonmagnetic metal layer, the at least one of the first intermediate layer and the second intermediate layer being in contact with the nonmagnetic metal layer, and
- the first intermediate layer and the second intermediate layer include an NiAlX alloy that is expressed by General Formula (1):
- Niγ1Alγ2Xγ3 (1)
- where
- X indicates one element selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3).
8 more elements
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the nonmagnetic spacer layer includes:
- a nonmagnetic metal layer, and
- at least one of a first intermediate layer provided under the nonmagnetic metal layer and a second intermediate layer provided over the nonmagnetic metal layer,
- the first intermediate layer and the second intermediate layer include an NiAlX alloy that is expressed by General Formula (1):
- Niγ1Alγ2Xγ3 (1)
- where X indicates one element selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3), and
- a value of γ3 changes along an in-plane direction or a thickness direction thereof.
8 more elements
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the nonmagnetic spacer layer includes:
- a nonmagnetic metal layer, and
- at least one of a first intermediate layer provided under the nonmagnetic metal layer and a second intermediate layer provided over the nonmagnetic metal layer,
- the first intermediate layer and the second intermediate layer include an NiAlX alloy that is expressed by General Formula (1):
- Niγ1Alγ2Xγ3 (1)
- where X indicates one element selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3), and
- a value of γ3 decreases as becoming farther from the ferromagnetic layer in a thickness direction thereof.
8 more elements
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the nonmagnetic spacer layer includes:
- a nonmagnetic metal layer, and
- an intermediate layer provided under the nonmagnetic metal layer, the intermediate layer being in contact with the nonmagnetic metal layer, and
- the intermediate layer includes an NiAlX alloy that is expressed by General Formula (1):
- Niγ1Alγ2Xγ3 (1)
- where X indicates one element selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3).
7 more elements
A magnetoresistive effect element comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- and
- a nonmagnetic spacer layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer,
- wherein the nonmagnetic spacer layer includes:
- a nonmagnetic metal layer, and
- an intermediate layer provided over the nonmagnetic metal layer, the intermediate layer being in contact with the nonmagnetic metal layer, and
- the intermediate layer includes an NiAlX alloy that is expressed by General Formula (1):
- Niγ1Alγ2Xγ3 (1)
- where X indicates one element selected from the group consisting of Si, Sc, Ti, Cr, Mn, Fe, Co, Cu, Zr, Nb, and Ta, and 0<γ<0.5 in a case of γ=γ3/(γ1+γ2+γ3).
7 more elements
Dependencies are inferred from the claim text.