Y10T 117/106
Including sealing means details
Official title: including sealing means details
Y10T117/106 (Including sealing means details) appears on 42 US grants and 24 published applications in this corpus.
Search patents in Y10T- Granted patents
- 42
- Published applications
- 24
- Assignees
- 31
- Inventors
- 87
- Latest grant
- 28 Aug 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 3 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 1 |
| 2002 | 0 | 3 |
| 2003 | 1 | 0 |
| 2004 | 1 | 3 |
| 2005 | 3 | 0 |
| 2006 | 1 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 2 |
| 2009 | 1 | 3 |
| 2010 | 0 | 1 |
| 2011 | 1 | 4 |
| 2012 | 4 | 2 |
| 2013 | 2 | 0 |
| 2014 | 3 | 1 |
| 2015 | 1 | 2 |
| 2016 | 0 | 1 |
| 2017 | 2 | 0 |
| 2018 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Crystal puller for inhibiting melt contamination28 Aug 2018US 10,060,046 B2Corner Star Limited
- Crystal growth chamber with O-ring seal for Czochralski growth station7 Nov 2017US 9,809,900 B2Siemens Medical Solutions USA, Inc.
- Continuous sapphire growth3 Oct 2017US 9,777,397 B2Apple Inc.
- Methods for pulling a multicrystalline silicon ingot from a silicon melt13 Jan 2015US 8,932,550 B2MEMC Singapore Pte. Ltd.
- Semiconductor single crystal production device and producing method therefor17 Jun 2014US 8,753,446 B2Sumco Techxiv Corporation
- Crystal puller for inhibiting melt contamination24 Mar 2016US 2016/0083864 A1Corner Star Limited
- Crystal Growth Chamber With O-Ring Seal For Czochralski Growth Station30 Apr 2015US 2015/0114285 A1Siemens Medical Solutions USA, Inc.
- Holder, crystal growing method, and crystal growing apparatus12 Mar 2015US 2015/0068444 A1KYOCERA Corporation
- Continuous sapphire growth3 Apr 2014US 2014/0090592 A1Apple Inc.
- Procedure for in-situ determination of thermal gradients at the crystal growth front26 Jul 2012US 2012/0186512 A1Sumco Phoenix Corporation
Most cited
By later US patents
- Device and process for pulling high-purity semiconductor rods from a melt46US 4,330,362 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1982
- Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber40US 6,562,123 B2MEMC Electronic Materials, Inc. · 2003
- Method of and apparatus for preparing single crystal19US 5,290,395 ASumitomo Electric Industries, Ltd. · 1994
- Apparatus for growing single crystals of dissociative compounds16US 4,704,257 AMitsubishi Metal Corporation · 1987
- Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device16US 7,001,457 B2Ricoh Company, Ltd. · 2006