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US 8,932,550 B2Granted
Methods for pulling a multicrystalline silicon ingot from a silicon melt
AssigneeMEMC Singapore Pte. Ltd.
InventorSteven L. Kimbel
Life of this patent
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Abstract
Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.
Claims15
A method for growing a silicon ingot in an ingot puller, the method comprising
- loading polycrystalline silicon into a crucible to form a silicon charge;
- heating the silicon charge to a temperature above about the melting temperature of the charge to form a silicon melt;
- bringing a plurality of seed crystals into contact with the silicon melt, the seed crystals being attached to a mounting bracket;
- and
- pulling a silicon ingot up from the silicon melt, the seed crystals being attached to the mounting bracket at a joint to allow for lateral movement of the seed crystals as the silicon ingot is withdrawn from the silicon melt and cools.
2 more elements
Dependencies are inferred from the claim text.