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US 7,001,457 B2Granted
Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
AssigneeRicoh Company, Ltd.
InventorsSeiji Sarayama, Hisanori Yamane, Masahiko Shimada, Masafumi Kumano, Hirokazu Iwata, Takashi Araki
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Abstract
A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).
Claims20
The group-III nitride crystal growth method comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
- d) preparing a plurality of temperature control zones controllable in temperature independently;
- e) transporting the alkaline metal after crystal growth for the group-III nitride crystal in one of said plurality of temperature control zones into another one thereof;
- and
- f) causing crystal growth for the group-III nitride crystal to occur in said another one of the plurality of temperature control zones after said step e).
5 more elements
The group-III nitride crystal growth method comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
- d) preparing a plurality of temperature control zones controllable in temperature independently;
- e) separating in atmosphere one of the plurality of temperature control zones from the others and causing crystal growth for the group-III nitride crystal in said one zone;
- f) integrating in atmosphere said one zone with another zone of the plurality of temperature control zones;
- g) transporting the alkaline metal from said one zone to said another zone;
- and
- h) causing crystal growth for the group-III nitride crystal to occur in said another zone.
7 more elements
A group-III nitride crystal growth method comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline metal and a substance at least containing a group-III metal;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
- d) preparing a plurality of temperature control zones controllable in temperature independently;
- e) transporting the alkaline metal after crystal growth for the group-III nitride crystal in one zone of said plurality of temperature control zones into another zone thereof;
- f) causing crystal growth for the group-III nitride crystal to occur in said another one of the plurality of temperature control zones after said step e);
- and
- g) repeating said steps e) and f) so as to transport the alkaline metal among said plurality of temperature control zones in sequence and causing crystal growth for the group-III nitride crystal in each of said plurality of temperature control zones, in sequence.
6 more elements
A group-III nitride crystal growth method comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline metal and a substance at least containing a group-III metal;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
- d) preparing a plurality of temperature control zones controllable in temperature independently;
- e) transporting the alkaline metal after crystal growth for the group-III nitride crystal in one zone of said plurality of temperature control zones into another zone thereof;
- f) causing crystal growth for the group-III nitride crystal to occur in said another one of the plurality of temperature control zones after said step e);
- and
- g) repeating said steps e) and f) so as to transport the alkaline metal between said one zone and another zone alternately, and causing crystal growth for the group-III nitride crystal in said plurality of temperature control zones alternately.
6 more elements
A group-III nitride crystal growth method comprising the steps of:
- a) preparing a mixed molten liquid of an alkaline metal and a substance at least containing a group-III metal;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) creating a state in said step b) in which nitrogen can be introduced into the molten liquid prepared by said step a);
- d) preparing a plurality of temperature control zones controllable in temperature independently;
- e) separating in atmosphere one of the plurality of temperature control zones from the others and causing crystal growth for the group-III nitride crystal in said one zone;
- f) integrating in atmosphere said one zone with another zone of the plurality of temperature control zones;
- g) transporting the alkaline metal from said one zone to said another zone;
- h) causing crystal growth for the group-III nitride crystal to occur in said another zone;
- i) repeating said steps e), f), g) and h) between said one zone and another zone alternately.
7 more elements
A group-III nitride crystal growth method comprising the steps of:
- a) forming a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal in a mixed molten liquid container provided in a reaction vessel;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in said step a) and a substance at least containing nitrogen;
- and
- c) feeding the substance at least containing the group-III metal from a material container provided outside of said reaction vessel into the inside of said reaction vessel thanks to the self gravity of said substance at least containing the group-III metal.
1 more element
A group-III nitride crystal growth method comprising the steps of:
- a) forming, in a reaction vessel, a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal is formed;
- b) causing growth of a group-III nitride crystal from the mixed molten liquid and a substance at least containing nitrogen;
- and
- c) feeding, by means of a predetermined pump device, the substance at least containing the group-III metal to said reaction vessel.
1 more element
A group-III nitride crystal growth method comprising the steps of:
- a) decomposing a group-III nitride into a group-III metal and nitrogen;
- and
- b) causing a group-III nitride crystal to grow through reaction between a group-III metal material and a nitride material in a molten liquid including an alkaline metal by utilizing a material yielded by said step a).
Dependencies are inferred from the claim text.