Y10S 977/761
Superlattice with well or barrier thickness adapted for increasing the reflection, transmission
Official title: Superlattice with well or barrier thickness adapted for increasing the reflection, transmission, or filtering of carriers having energies above the bulk-form conduction or valence band energy level of the well or barrier, i.e. well or barrier with n-integer-λ-carrier-/4 thickness
Y10S977/761 (Superlattice with well or barrier thickness adapted for increasing the reflection, transmission) appears on 40 US grants and 12 published applications in this corpus.
Search patents in Y10S- Granted patents
- 40
- Published applications
- 12
- Assignees
- 21
- Inventors
- 70
- Latest grant
- 10 Oct 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 3 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 1 |
| 2002 | 2 | 0 |
| 2003 | 1 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 1 |
| 2006 | 1 | 5 |
| 2007 | 2 | 3 |
| 2008 | 0 | 0 |
| 2009 | 4 | 0 |
| 2010 | 2 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Titanium nitride based metamaterial10 Oct 2017US 9,784,888 B2Purdue Research Foundation
- Fabrication of nano-object array9 Nov 2010US 7,829,352 B2Hewlett-Packard Development Company, L. P.
- Composite material with electromagnetically reactive cells and quantum dots13 Apr 2010US 7,695,646 B2Hewlett-Packard Development Company, L. P.
- Structure of polymer-matrix conductive film and method for fabricating the same20 Oct 2009US 7,605,474 B2Industrial Technology Research Institute
- Structure of polymer-matrix conductive film and method for fabricating the same6 Oct 2009US 7,598,609 B2Industrial Technology Research Institute
- Titanium nitride based metamaterial8 Oct 2015US 2015/0285953 A1Purdue Research Foundation
- Integrated carbon nanotube sensors23 Aug 2007US 2007/0197010 A1International Business Machines Corporation
- Composite material with electromagnetically reactive cells and quantum dots24 May 2007US 2007/0114431 A1Hewlett-Packard Development Company, L. P.
- Fabrication Of Nano-object Array25 Jan 2007US 2007/0020773 A1Hewlett-Packard Development Company, L. P.
- Light emitting semiconductor device14 Dec 2006US 2006/0278880 A1Arima Computer Corporation
Most cited
By later US patents
- Light emitting semiconductor device1,509US 7,265,374 B2Arima Computer Corporation · 2007
- Semiconductor device33US 4,620,206 AAgency of Industrial Science and Technology · 1986
- Superlattice structure23US 5,091,756 ATokyo Institute of Technology · 1992
- Quantum well device for producing localized electron states for detectors and modulators22US 5,311,009 AAT&T Bell Laboratories · 1994
- Method of making substantially linear field-effect transistor19US 5,266,506 AAT&T Bell Laboratories · 1993