Integrated carbon nanotube sensors

A method of evaluating operating parameters of an integrated circuit, said method comprising:

• providing a primary transistor in said integrated circuit;
• embedding a carbon nanotube field effect transistor (CNT FET) in said integrated circuit and spaced apart from said primary transistor;
• measuring physical characteristics within said integrated circuit using said CNT FET;
• and
• measuring stress and strain in said integrated circuit using said CNT FET, wherein said stress and strain comprise any of mechanical and thermal stress and strain.

A method of manufacturing an integrated circuit, said method comprising:

• placing a primary transistor in said integrated circuit structure;
• and
• embedding a carbon nanotube field effect transistor (CNT FET) in said integrated circuit structure such that said CNT FET is spaced apart from said primary transistor,
• wherein said CNT FET is configured to measure physical characteristics within said integrated circuit structure,
• wherein said primary transistor comprises:
• a gate;
• source and drain regions;
• and
• a gate insulator separating said gate from each of said source and drain regions,
• wherein said CNT FET comprises:
• a CNT FET gate:
• CNT FET source and drain regions;
• and
• a carbon nanotube separating the CNT FET source region and the CNT FET drain region.