Light emitting semiconductor device
AssigneeArima Computer Corporation
InventorsStephen Lee, Yury Georgievich Shreter, Yury Toomasovich Rebane, Ruslan Ivanovich Gorbunov
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Abstract
A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current thereof is reduced. In addition, the provided light emitting semiconductor device fabricated via a planar technology process is microscopically planar, but not planar at micro- and nano-scale. Hence the parasitic wave guiding effect, which suppresses the light extraction efficiency of the light emitting semiconductor device, is destroyed thereby.
Claims21
A light emitting semiconductor device comprising:
- a substrate;
- a buffer layer on said substrate;
- a first contact layer having a first type of a dopant on said buffer layer;
- an active layer having a plurality of first nano-particles on said first contact layer;
- and
- a second contact layer having a second type of a dopant on said active layer.
A method for fabricating a light emitting semiconductor device, comprising steps of:
- (a) providing a substrate;
- (b) forming a buffer layer on said substrate;
- (c) forming a first contact layer having a first type of a dopant on said buffer layer, wherein said first contact layer has a dopant of a first type;
- (d) forming an active layer having a plurality of nano-particles on said first contact layer;
- (e) forming a second contact layer having a second type of a dopant on said active layer;
- (f) forming a metallization layer on said second contact layer;
- (g) removing a part of said metallization layer, said second contact layer, said active layer and said first contact layer so as to expose at least a part of said first contact layer;
- and
- (h) forming a third contact layer on said exposed first contact layer.
A method for fabricating a light emitting semiconductor device, comprising steps of:
- (a) providing a substrate;
- (b) forming a buffer layer having a plurality of nano-particles on said substrate;
- (c) forming a first contact layer having a first type of a dopant on said buffer layer;
- (d) forming an active layer with quantum wells on said first contact layer;
- and
- (e) forming a second contact layer having a second type of a dopant on said active layer.
Dependencies are inferred from the claim text.