H10K 10/478
The gate dielectric comprising a layer of composite material comprising interpenetrating or
Official title: {the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix}
H10K10/478 (The gate dielectric comprising a layer of composite material comprising interpenetrating or) appears on 85 US grants and 111 published applications in this corpus.
Search patents in H10K- Granted patents
- 85
- Published applications
- 111
- Assignees
- 54
- Inventors
- 247
- Latest grant
- 5 Aug 2025
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Most cited
By later US patents
- Film forming method, semiconductor device, manufacturing method thereof and substrate processing apparatus therefor470US 8,785,311 B2Tokyo Electron Limited · 2014
- Substrate processing apparatus469US 8,999,102 B2Tokyo Electron Limited · 2015
- Transistor insulator layer incorporating superfine ceramic particles39US 6,586,791 B13M Innovative Properties Company · 2003
- Organic polymers, electronic devices, and methods31US 7,098,525 B23M Innovative Properties Company · 2006
- Artificial dielectrics using nanostructures29US 7,365,395 B2Nanosys, Inc. · 2008