Transistor insulator layer incorporating superfine ceramic particles
Assignee3M Innovative Properties Company
InventorsTzu-Chen Lee, Nelson B. O'Bryan
Life of this patent
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Abstract
An insulating layer in a field effect transistor is formed of superfine ceramic particles dispersed in a polymeric matrix. The characteristics of the insulating layer can be changed by varying the mix of ceramic particles and matrix components. Appropriate selection of components can provide a high dielectric constant material which is not subject to pinholes, has a high voltage breakdown and is chemically resistant. The material can be applied at relatively low processing temperatures, using a wide range of coating techniques, and is highly suited for use with polymeric substrates.
Claims24
A transistor comprising:
- a) A gate electrode;
- b) An insulating layer proximate the gate electrode, the insulating layer comprising:
- i) A polymeric matrix;
- and
- ii) Ceramic particles less than about 200 nm in average diameter dispersed in the matrix;
- c) A source electrode and a drain electrode proximate the insulating layer on an opposite side thereof from the gate electrode and spaced from each other;
- and
- d) A semiconductor layer connecting the source and drain electrodes, the gate electrode being positioned such that a voltage in the gate electrode will cause the semiconductor to electrically connect the source and drain electrodes.
A transistor comprising:
- a) A metallic gate electrode;
- b) An insulating layer proximate the gate electrode, the insulating layer comprising:
- i) A polymeric matrix comprising a cured epoxy resin;
- and
- ii) Barium titanate particles about 50 nm in average diameter dispersed in the matrix;
- c) A metallic source electrode and a metallic drain electrode proximate the insulating layer on an opposite side thereof from the gate electrode and spaced from each other;
- and
- d) A semiconductor layer comprising pentacene connecting the source and drain electrodes, the gate electrode being positioned such that a voltage in the gate electrode will cause the semiconductor to electrically connect the source and drain electrodes.
Dependencies are inferred from the claim text.