H10F 55/17
Wherein the radiation-sensitive semiconductor devices have potential barriers
Official title: {wherein the radiation-sensitive semiconductor devices have potential barriers}
H10F55/17 (Wherein the radiation-sensitive semiconductor devices have potential barriers) appears on 44 US grants and 50 published applications in this corpus.
Search patents in H10F- Granted patents
- 44
- Published applications
- 50
- Assignees
- 44
- Inventors
- 119
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 1 | 4 |
| 2009 | 2 | 3 |
| 2010 | 3 | 5 |
| 2011 | 2 | 7 |
| 2012 | 1 | 1 |
| 2013 | 5 | 1 |
| 2014 | 3 | 2 |
| 2015 | 1 | 4 |
| 2016 | 2 | 3 |
| 2017 | 4 | 1 |
| 2018 | 3 | 0 |
| 2019 | 0 | 6 |
| 2020 | 2 | 3 |
| 2021 | 4 | 1 |
| 2022 | 1 | 0 |
| 2023 | 0 | 2 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
| 2026 | 1 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Gas sensor20 Aug 2026US 2026/0247739 A1Asahi Kasei Microdevices Corporation
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- Optoelectronic module and optical artificial neural network system including the same22 Jan 2026US 2026/0023965 A1Electronics and Telecommunications Research Institute
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- Photosensor15 Jun 2023US 2023/0187571 A1Rohm Co., Ltd.
Most cited
By later US patents
- Semiconductor structure having an optical signal path in a substrate and method for forming the same177US 5,987,196 AMicron Technology, Inc. · 1999
- Three-dimensional architecture for solid state radiation detectors51US 5,889,313 AUniversity of Hawaii · 1999
- JFET optical sensor with capacitively charged buried floating gate35US 3,947,707 AU. S. Philips Corporation · 1976
- Retinal prosthesis29US 8,150,526 B2Nano-Retina, Inc. · 2012
- Semiconductor device comprising a photoelectric current amplifier22US 7,485,838 B2Semiconductor Energy Laboratory Co.Ltd. · 2009