H01S 5/3226
Sic
Official title: {SiC}
H01S5/3226 (Sic) appears on 10 US grants and 2 published applications in this corpus.
Search patents in H01S- Granted patents
- 10
- Published applications
- 2
- Assignees
- 6
- Inventors
- 30
- Latest grant
- 13 Jan 2004
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 3 | 0 |
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Optical semiconductor device using a SiGeC random mixed crystal13 Jan 2004US 6,678,296 B1Fujitsu Limited
- Semiconductor laser, semiconductor device, and their manufacture methods12 Aug 2003US 6,606,335 B1Fujitsu Limited
- III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers5 Jun 2001US 6,242,764 B1Kabushiki Kaisha Toshiba
- Semiconductor optoelectric device and method of manufacturing the same27 Jun 2000US 6,080,599 AKabushiki Kaisha Toshiba
- Semiconductor optoelectric device and method of manufacturing the same26 Jan 1999US 5,864,171 AKabushiki Kaisha Toshiba
Most cited
By later US patents
- Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth216US 5,625,202 AUniversity of Central Florida · 1997
- Low-strain laser structures with group III nitride active layers174US 5,592,501 ACree Research, Inc. · 1997
- Low-strain laser structures with group III nitride active layers96US 5,838,706 ACree Research, Inc. · 1998
- Semiconductor laser, semiconductor device, and their manufacture methods79US 6,606,335 B1Fujitsu Limited · 2003
- Semiconductor optoelectric device and method of manufacturing the same67US 5,864,171 AKabushiki Kaisha Toshiba · 1999