III-N semiconductor light-emitting element having strain-moderating crystalline buffer layers
AssigneeKabushiki Kaisha Toshiba
InventorsYasuo Ohba, Hiroaki Yoshida
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Abstract
Disclosed is a GaN-based compound semiconductor light-emitting element, comprising an AlN buffer layer, a GaN lattice strain moderating layer, and an n-type AlGaN contact layer formed on the layer. The GaN lattice strain moderating layer has a lattice constant larger than that of the AlN buffer layer. On the other hand, the contact layer has a lattice constant smaller than that of the AlN buffer layer. Further, the GaN lattice strain moderating layer has a thickness falling within a range of between 0.01 μm to 0.5 μm.
Claims10
A semiconductor light-emitting element, comprising:
- a single crystalline substrate made of sapphire;
- a first single crystalline semiconductor layer directly formed on said single crystalline substrate, having a first lattice constant LC1, and consisting of AlN, AlInN, AlGaInN, AlGaN or SiC;
- a second single crystalline semiconductor layer formed on said first semiconductor layer, having a second lattice constant LC2, and consisting of GaN, GaInN, AlGaN or AlGaInN;
- a third semiconductor layer formed on said second semiconductor layer, acting as an element forming region, having a third lattice constant LC3, and consisting of AlGaN or AlGaInN;
- and
- an electrode directly formed on an exposed surface of said third semiconductor layer;
- wherein said first semiconductor layer has a thickness falling within a range of between 0.1 μm and 10 μm and said second semiconductor layer has a thickness falling within a range of between 0.01 μm and 0.5 μm and said first, second and third lattice constants LC1, LC2 and LC3 meet the relationship LC2>LC3>LC1.
A semiconductor light-emitting element, comprising:
- a single crystalline substrate made of sapphire;
- a first single crystalline semiconductor layer directly formed on said single crystalline substrate, having a first lattice constant LC1, and consisting of AlN, AlInN, AlGaInN, AlGaN or SiC;
- a second single crystalline semiconductor layer formed on said first semiconductor layer, having a second lattice constant LC2, and consisting of GaN;
- and
- a third semiconductor layer formed on said second semiconductor layer, acting as an element forming region, having a third lattice constant LC3, and consisting of AlGaN or AlGaInN;
- wherein said first semiconductor layer has a thickness falling within a range of between 0.1 μm and 10 μm, said second semiconductor layer has a thickness falling within a range of between 0.05 μm and 0.15 μm and said first, second and third lattice constants LC1, LC2 and LC3 meet the relationship LC2>LC3>LC1.
A semiconductor light-emitting element, comprising:
- a single crystalline substrate made of sapphire;
- a first semiconductor layer directly formed on said single crystalline substrate, having a first lattice constant LC1, and consisting of AlN, AlInN, AlGaInN, AlGaN or SiC;
- a second semiconductor layer formed on said first semiconductor layer, having a second lattice constant LC2, and consisting of AlGaN;
- and
- a third semiconductor layer formed on said second semiconductor layer, acting as an element forming region, having a third lattice constant LC3, and consisting of Al GaN or AlGaInN;
- wherein said first semiconductor layer has a thickness falling within a range of between 0.1 μm and 10 μm, said second semiconductor layer has a thickness falling within a range of between 0.01 μm and 0.5 μm and said first, second and third lattice constants LC1, LC2 and LC3 meet the relationship LC2>LC3>LC1.
Dependencies are inferred from the claim text.