Semiconductor optoelectric device and method of manufacturing the same

A method of manufacturing a semiconductor optoelectric device comprising the steps of:

• preparing a monocrystalline substrate of hexagonal close-packed structure such that the surface roughness of a back surface of the monocrystalline substrate falls within 10% of the thickness thereof;
• depositing compound-semiconductor layers on said monocrystalline substrate;
• connecting electrodes on said compound-semiconductor layers;
• and
• cutting said monocrystalline substrate provided with said compound-semiconductor layers into polygonal chips such that
• individual sides are substantially parallel to a <1-100>
• orientation or <11-20>
• orientation;
• and
• the longest side is at least twice as long as the thickness of said monocrystalline substrate.

A method of manufacturing a semiconductor optoelectric device comprises the steps of:

• preparing a monocrystalline substrate of the hexagonal close-packed structure such that the surface roughness of a back surface of the monocrystalline substrate falls within 10% of the thickness thereof;
• depositing compound-semiconductor layers on said monocrystalline substrate;
• connecting electrodes to said compound-semiconductor layers;
• and
• cutting said monocrystalline substrate provided with said compound-semiconductor layers into polygonal chips such that
• a side is substantially parallel to a <11-20>
• orientation;
• another side is substantially parallel to a <1-100>
• orientation;
• and
• the longest side is at least twice as long as the thickness of the monocrystalline substrate.

A method of manufacturing a laser diode comprising the steps of:

• depositing compound-semiconductor layers on a monocrystalline substrate of a hexagonal close-packed structure;
• connecting electrodes to the compound-semiconductor layers;
• and
• cutting said monocrystalline substrate provided with the compound-semiconductor layers into polygonal chips individual sides of which are substantially parallel to a <11-20>
• orientation.

A method of manufacturing a laser diode comprising the steps of:

• preparing a monocrystalline substrate of hexagonal close-packed structure such that the surface roughness of a back surface of the monocrystalline substrate falls within 10% of the thickness thereof;
• depositing compound-semiconductor layers on said monocrystalline substrate;
• connecting electrodes on said compound-semiconductor layers;
• and
• cutting said monocrystalline substrate provided with said compound-semiconductor layers into polygonal chips such that individual sides are substantially parallel to a <1-100>
• orientation or <11-20>
• orientation, and the longest side is at least twice as long as the thickness of said monocrystalline substrate.

A method of manufacturing a laser diode comprises the steps of:

• preparing a monocrystalline substrate of the hexagonal close-packed structure such that the surface roughness of a back surface of the monocrystalline substrate falls within 10% of the thickness thereof;
• depositing compound-semiconductor layers on said monocrystalline substrate;
• connecting electrodes to said compound semiconductor layers;
• and
• cutting said monocrystalline substrate provided with said compound-semiconductor layers into polygonal chips such that a side is substantially parallel to a <11-20>
• orientation, another side is substantially parallel to a <1-100>
• orientation, and the longest side is at least twice as long as the thickness of the monocrystalline substrate.