Back to results
US 6,678,296 B1Granted
Optical semiconductor device using a SiGeC random mixed crystal
AssigneeFujitsu Limited
InventorMari Ohfuti
Life of this patent
Estimating the term…
Abstract
An optical semiconductor device is constructed on a Si substrate and includes an active layer of a SiGeC mixed crystal in which Si, Ge and C atoms are distributed at random.
Claims14
An optical semiconductor device, comprising:
- a Si substrate having a first conductivity type;
- an active layer of a SiGeC mixed crystal formed over said Si substrate with an epitaxial relationship with respect to said Si substrate, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement, said SiGeC mixed crystal having a direct-transition band structure;
- an upper cladding layer formed on said active layer with a second, opposite conductivity type;
- a first electrode provided on said Si substrate in electric connection with said Si substrate;
- and
- a second electrode provided in electric connection with said upper cladding layer,
- said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy,
- said compositional parameter x being 0.24 and said compositional parameter y being 0.03.
5 more elements
An opto-electronic integrated circuit, comprising:
- a Si substrate having a first region having a first conductivity type and a second region;
- a laser diode formed on said first region of said Si substrate,
- said laser diode comprising:
- a lower cladding layer formed epitaxially on said first region of said Si substrate with said first conductivity type;
- an active layer of a SiGeC mixed crystal formed on said lower cladding layer epitaxially, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement;
- an upper cladding layer formed on said active layer with a second, opposite conductivity type;
- a first ohmic electrode provided in electric connection with said Si substrate;
- and a second ohmic electrode provided in electric connection with said upper cladding layer, said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy, said compositional parameter x being about 0.24 and said compositional parameter y being about 0.03;
- said SiGeC mixed crystal having a direct-transition band structure,
- an optical waveguide provided on said second region of said Si substrate, and
- an electronic device formed on a third region of said Si substrate.
8 more elements
An optical semiconductor device comprising:
- a Si substrate having a first conductivity type;
- an active layer of a SiGeC mixed crystal formed over said Si substrate with an epitaxial relationship with respect to said Si substrate, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement, said SiGeC mixed crystal having a direct-transition band structure for 0.95 eV or less bandgap energy;
- said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy, said compositional parameter x being about 0.24 and said compositional parameter y being about 0.03.
An opto-electronic integrated circuit, comprising:
- a Si substrate having a first region having a first conductivity type and a second region;
- a laser diode formed on said first region of said Si substrate,
- said laser diode comprising:
- a lower cladding layer formed epitaxially on said first region of said Si substrate with said first conductivity type;
- and an active layer of a SiGeC mixed crystal formed on said lower cladding layer epitaxially, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement;
- an upper cladding layer formed on said active layer with a second, opposite conductivity type;
- a first ohmic electrode provided in electric connection with said Si substrate;
- and a second ohmic electrode provided in electric connection with said upper cladding layer, said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy, said compositional parameter x being about 0.24 and said compositional parameter y being about 0.03;
- said SiGeC mixed crystal having a direct-transition band structure for 0.95 eV or less bandgap energy,
- an optical waveguide provided on said second region of said Si substrate, and
- an electronic device formed on a third region of said Si substrate.
8 more elements
An optical semiconductor device, comprising:
- a Si substrate having a first conductivity type;
- an active layer of a SiGeC mixed crystal formed over said Si substrate with an epitaxial relationship with respect to said Si substrate, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement, said SiGeC mixed crystal having a direct-transition band structure;
- an upper cladding layer formed on said active layer with a second, opposite conductivity type;
- a first electrode provided on said Si substrate in electric connection with said Si substrate;
- and
- a second electrode provided in electric connection with said upper cladding layer,
- said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy,
- said compositional parameter x being 0.32 and said compositional parameter y being 0.04.
5 more elements
An opto-electronic integrated circuit, comprising:
- a Si substrate having a first region having a first conductivity type and a second region;
- a laser diode formed on said first region of said Si substrate,
- said laser diode comprising:
- a lower cladding layer formed epitaxially on said first region of said Si substrate with said first conductivity type;
- an active layer of a SiGeC mixed crystal formed on said lower cladding layer epitaxially, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement;
- an upper cladding layer formed on said active layer with a second, opposite conductivity type;
- a first ohmic electrode provided in electric connection with said Si substrate;
- and a second ohmic electrode provided in electric connection with said upper cladding layer, said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy, said compositional parameter x being about 0.32 and said compositional parameter y being about 0.04;
- said SiGeC mixed crystal having a direct-transition band structure, an optical waveguide provided on said second region of said Si substrate, and an electronic device formed on a third region of said Si substrate.
6 more elements
An optical semiconductor device comprising:
- a Si substrate having a first conductivity type;
- an active layer of a SiGeC mixed crystal formed over said Si substrate with an epitaxial relationship with respect to said Si substrate, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement, said SiGeC mixed crystal having a direct-transition band structure for 0.95 eV or less bandgap energy,
- said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy, said compositional parameter x being about 0.32 and said compositional parameter y being about 0.04.
An opto-electronic integrated circuit, comprising:
- a Si substrate having a first region having a first conductivity type and a second region;
- a laser diode formed on said first region of said Si substrate,
- said laser diode comprising:
- a lower cladding layer formed epitaxially on said first region of said Si substrate with said first conductivity type;
- and an active layer of a SiGeC mixed crystal formed on said lower cladding layer epitaxially, said SiGeC mixed crystal containing Si atoms, Ge atoms, and C atoms in a random atomic arrangement;
- an upper cladding layer formed on said active layer with a second, opposite conductivity type;
- a first ohmic electrode provided in electric connection with said Si substrate;
- and a second ohmic electrode provided in electric connection with said upper cladding layer, said active layer having a composition represented in terms of compositional parameters x and y as Si1−x−yGexCy, said compositional parameter x being about 0.32 and said compositional parameter y being about 0.04;
- said SiGeC mixed crystal having a direct-transition band structure for 0.95 eV or less bandgap energy,
- an optical waveguide provided on said second region of said Si substrate, and
- an electronic device formed on a third region of said Si substrate.
8 more elements
Dependencies are inferred from the claim text.