H01S 5/18316
Airgap confined
Official title: {Airgap confined}
H01S5/18316 (Airgap confined) appears on 90 US grants and 90 published applications in this corpus.
Search patents in H01S- Granted patents
- 90
- Published applications
- 90
- Assignees
- 47
- Inventors
- 182
- Latest grant
- 13 Jan 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 3 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 15 |
| 2003 | 9 | 6 |
| 2004 | 9 | 11 |
| 2005 | 7 | 5 |
| 2006 | 4 | 5 |
| 2007 | 4 | 3 |
| 2008 | 1 | 2 |
| 2009 | 4 | 4 |
| 2010 | 2 | 1 |
| 2011 | 2 | 5 |
| 2012 | 4 | 2 |
| 2013 | 1 | 2 |
| 2014 | 1 | 2 |
| 2015 | 2 | 2 |
| 2016 | 5 | 5 |
| 2017 | 1 | 3 |
| 2018 | 4 | 4 |
| 2019 | 3 | 1 |
| 2020 | 2 | 1 |
| 2021 | 1 | 4 |
| 2022 | 2 | 2 |
| 2023 | 3 | 3 |
| 2024 | 1 | 0 |
| 2025 | 1 | 1 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Surface-emitting laser element and surface-emitting laser element manufacturing method13 Jan 2026US 12,525,767 B2Kyoto University
- Method for electrochemically etching a semiconductor structure17 Jun 2025US 12,336,325 B2Cambridge Enterprise Limited
- Oxide spacer HCG VCSELS and fabrication methods20 Aug 2024US 12,068,580 B2The Regents of the University of California
- Vertical-cavity surface-emitting laser (VCSEL) device and method of making the same8 Aug 2023US 11,721,952 B2Mellanox Technologies, Ltd.
- Method for electrochemically etching a semiconductor structure18 Apr 2023US 11,631,782 B2Cambridge Enterprise Limited
- Surface-emitting laser element and surface-emitting laser element manufacturing method9 Apr 2026US 2026/0100556 A1Kyoto University
- Method for electrochemically etching a semiconductor structure18 Sep 2025US 2025/0294919 A1Cambridge Enterprise Limited
- Surface-emitting laser element and surface-emitting laser element manufacturing method27 Apr 2023US 2023/0127863 A1Kyoto University
- Method for electrochemically etching a semiconductor structure6 Apr 2023US 2023/0105367 A1Cambridge Enterprise Limited
- Vertical cavity surface emitting laser element, vertical cavity surface emitting laser element array, vertical cavity surface emitting laser module, and method of producing vertical cavity surface emitting laser element5 Jan 2023US 2023/0006421 A1Sony Group Corporation
Most cited
By later US patents
- Vertical-cavity surface-emitting lasers with intra-cavity structures163US 5,245,622 ABandgap Technology Corporation · 1993
- High efficiency VCSEL and method of fabrication85US 5,359,618 AMotorola, Inc. · 1994
- 1250-1650 nm vertical cavity surface emitting laser pumped by a 700-1050 nm vertical cavity surface emitting laser85US 5,754,578 AW. L. Gore & Associates, Inc. · 1998
- Current-apertured vertical cavity laser77US 5,594,751 AOptical Concepts, Inc. · 1997
- Method of making a vertical cavity laser55US 5,877,038 AThe Regents of the University of California · 1999