H01J 21/105
With microengineered cathode and control electrodes
Official title: {with microengineered cathode and control electrodes, e.g. Spindt-type}
H01J21/105 (With microengineered cathode and control electrodes) appears on 160 US grants and 48 published applications in this corpus.
Search patents in H01J- Granted patents
- 160
- Published applications
- 48
- Assignees
- 76
- Inventors
- 234
- Latest grant
- 30 May 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 8 | 0 |
| 1992 | 12 | 0 |
| 1993 | 13 | 0 |
| 1994 | 8 | 0 |
| 1995 | 14 | 0 |
| 1996 | 5 | 0 |
| 1997 | 9 | 0 |
| 1998 | 12 | 0 |
| 1999 | 5 | 0 |
| 2000 | 7 | 0 |
| 2001 | 4 | 2 |
| 2002 | 6 | 1 |
| 2003 | 2 | 2 |
| 2004 | 0 | 0 |
| 2005 | 1 | 3 |
| 2006 | 3 | 1 |
| 2007 | 2 | 1 |
| 2008 | 1 | 1 |
| 2009 | 1 | 0 |
| 2010 | 2 | 0 |
| 2011 | 0 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 1 | 1 |
| 2015 | 1 | 2 |
| 2016 | 3 | 4 |
| 2017 | 6 | 8 |
| 2018 | 5 | 7 |
| 2019 | 6 | 4 |
| 2020 | 9 | 7 |
| 2021 | 7 | 3 |
| 2022 | 0 | 0 |
| 2023 | 2 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Gate all around vacuum channel transistor30 May 2023US 11,664,458 B2STMicroelectronics S.r. l.
- Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes16 May 2023US 11,651,925 B2International Business Machines Corporation
- Device for controlling electron flow and method for manufacturing said device16 Nov 2021US 11,177,104 B2Evince Technology Limited
- Device for controlling electron flow and method for manufacturing said device17 Aug 2021US 11,094,496 B2Evince Technology Limited
- Gate all around vacuum channel transistor8 Jun 2021US 11,031,504 B2STMicroelectronics S.r. l.
- Gate all around vacuum channel transistor2 Sep 2021US 2021/0273116 A1STMicroelectronics S.r. l.
- Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes3 Jun 2021US 2021/0166908 A1International Business Machines Corporation
- Device for Controlling Electron Flow and Method for Manufacturing Said Device27 May 2021US 2021/0159039 A1Evince Technology Limited
- Image Intensifier with Thin Layer Transmission Layer Support Structures24 Dec 2020US 2020/0402757 A1Eagle Technology, LLC
- Device for controlling electron flow and method for manufacturing said device10 Dec 2020US 2020/0388460 A1Evince Technology Limited
Most cited
By later US patents
- Split collector vacuum field effect transistor357US 5,012,153 A1991
- Sealed micromachined vacuum and gas filled devices173US 5,493,177 AThe Regents of the University of California · 1996
- Process and structure of an integrated vacuum microelectronic device107US 5,203,731 AInternational Business Machines Corporation · 1993
- Field emission vacuum devices101US 4,827,177 AGeneral Electric Company · 1989
- Vacuum-sealed silicon incandescent light81US 5,285,131 AUniversity of California, Berkeley · 1994