Process and structure of an integrated vacuum microelectronic device
AssigneeInternational Business Machines Corporation
InventorSteven M. Zimmerman
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Abstract
The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.
Claims49
A process of making at least one integrated vacuum microelectronic device comprising the steps of:
- a) providing at least one hole in a substrate having at least one electrically conductive material,
- b) filling at least a portion of said hole with at least one material sufficiently to form a cusp,
- c) depositing at least one layer of a material which is capable of emitting electrons under the influence of an electrical field, and filling at least a portion of said cusp to form a tip,
- d) providing at least one access hole to help facilitate the removal of material underneath the cusp, and
- e) removing the material underneath said cusp to expose at least a portion of said tip of said electron-emitting material and at least a portion of said electrically conductive material in said substrate, thereby forming said at least one integrated vacuum microelectronic device.
A process of making at least one integrated vacuum microelectronic device comprising the steps of:
- a) providing at least one hole in a substrate having at least one electrically conductive material,
- b) depositing at least one insulative material and filling said hole to form a cusp,
- c) depositing at least one layer of a material which is capable of emitting electrons under the influence of an electrical field, and filling at least a portion of said cusp to form a tip,
- d) providing at least one access hole to help facilitate the removal of material underneath the cusp, and
- e) through said access hole removing all of said material in said hole and exposing at least a portion of said tip of said electron-emitting material and at least a portion of said electrically conductive material in said substrate, thereby forming said at least one integrated vacuum microelectronic device.
Dependencies are inferred from the claim text.