H01F 10/325
The spacer being noble metal
Official title: {the spacer being noble metal}
H01F10/325 (The spacer being noble metal) appears on 137 US grants and 135 published applications in this corpus.
Search patents in H01F- Granted patents
- 137
- Published applications
- 135
- Assignees
- 78
- Inventors
- 318
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 5 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 0 | 0 |
| 2002 | 3 | 2 |
| 2003 | 1 | 3 |
| 2004 | 1 | 1 |
| 2005 | 1 | 4 |
| 2006 | 2 | 4 |
| 2007 | 5 | 6 |
| 2008 | 1 | 5 |
| 2009 | 3 | 10 |
| 2010 | 4 | 4 |
| 2011 | 4 | 8 |
| 2012 | 5 | 11 |
| 2013 | 9 | 9 |
| 2014 | 9 | 7 |
| 2015 | 9 | 5 |
| 2016 | 6 | 4 |
| 2017 | 5 | 2 |
| 2018 | 3 | 4 |
| 2019 | 4 | 8 |
| 2020 | 4 | 5 |
| 2021 | 8 | 10 |
| 2022 | 7 | 12 |
| 2023 | 10 | 3 |
| 2024 | 3 | 3 |
| 2025 | 4 | 3 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory device and manufacturing method thereof2 Jun 2026US 12,648,365 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Light detection element, receiving device, and light sensor device26 May 2026US 12,641,914 B2TDK Corporation
- Receiving device, transceiver device, communication system, portable terminal device, and photodetection element17 Jun 2025US 12,332,114 B2TDK Corporation
- Magnetoresistance effect element and Heusler alloy4 Feb 2025US 12,217,775 B2TDK Corporation
- Optical sensor, optical sensor unit, optical sensor device, and information terminal device4 Feb 2025US 12,218,161 B2TDK Corporation
- Memory device and manufacturing method thereof17 Sep 2026US 2026/0282759 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Tmr sensor having antiferromagnetically coupled vortices16 Apr 2026US 2026/0104478 A1Allegro MicroSystems, LLC
- Magnetoresistance effect element and heusler alloy26 Jun 2025US 2025/0210060 A1TDK Corporation
- Receiving device, transceiver device, communication system, portable terminal device, and photodetection element19 Jun 2025US 2025/0198834 A1TDK Corporation
- Optical sensor24 Apr 2025US 2025/0133851 A1TDK Corporation
Most cited
By later US patents
- Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor202US 5,408,377 AInternational Business Machines Corporation · 1995
- High speed low power annular magnetic devices based on current induced spin-momentum transfer174US 7,307,876 B2New York University · 2007
- High speed low power magnetic devices based on current induced spin-momentum transfer161US 6,980,469 B2New York University · 2005
- Method and system for providing an improved magnetoresistive structure utilizing an oxidation buffer layer153US 8,315,019 B1Western Digital (Fremont), LLC · 2012
- Magnetoresistance effect element145US 5,549,978 AKabushiki Kaisha Toshiba · 1996