Magnetoresistance effect element

A magnetoresistance effect element comprising:

• a substrate;
• a stacked film formed on said substrate, and
• a pair of leads to supply current to said stacked film,
• said stacked film being comprised of a first ferromagnetic film, a second ferromagnetic film and a nonmagnetic film disposed between said first and second ferromagnetic films wherein said first and second ferromagnetic films are not substantially coupled with each other, a direction of magnetization of said first ferromagnetic film is pinned, said second ferromagnetic film is a field-detecting film, the magnetization of said first ferromagnetic film does not substantially rotate with lower signal magnetic fields than the magnetization of said second ferromagnetic film does, said second ferromagnetic film comprises a Co alloy having a fcc crystal structure, and a (111) plane of said stacked film is oriented in a direction perpendicular to a surface of said stacked film,
• wherein said nonmagnetic film comprises Cu, Al, Pd, Pt, Rh, Ru, Ir, Au, Ag, a CuPd alloy, a CuPt alloy, a CuAu alloy or a CuNi alloy, wherein said first ferromagnetic film comprises Co, a CoFe-alloy, a CoNi alloy, a NiFe alloy, a NiFeCo alloy or Fe.sub.8 N, and wherein said second ferromagnetic film comprises a CoFe alloy, a CoNi alloy or a NiFeCo alloy.