H01F 1/402
Of ii-vi type
Official title: {of II-VI type, e.g. Zn1-x Crx Se}
H01F1/402 (Of ii-vi type) appears on 7 US grants and 12 published applications in this corpus.
Search patents in H01F- Granted patents
- 7
- Published applications
- 12
- Assignees
- 11
- Inventors
- 37
- Latest grant
- 13 Dec 2016
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 1 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 4 |
| 2007 | 1 | 1 |
| 2008 | 0 | 2 |
| 2009 | 1 | 2 |
| 2010 | 1 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Methods for creating ligand induced paramagnetism in nanocrystalline structures13 Dec 2016US 9,520,217 B2Lawrence Livermore National Security, LLC
- Antiferromagnetic half-metallic semiconductor and manufacturing method therefor7 Sep 2010US 7,790,585 B2Osaka University
- Ferromagnetic material5 May 2009US 7,527,983 B2Spintronix AB
- Spin filter and a memory using such a spin filter20 Feb 2007US 7,180,087 B1ETeCH AG
- Integratable polarization rotator28 Nov 2006US 7,141,843 B2Intel Corporation
- Methods for creating ligand induced paramagnetism in nanocrystalline structures17 Jun 2010US 2010/0148112 A1Lawrence Livermore National Security, LLC
- Antiferromagnetic half-metallic semiconductor and manufacturing method therefor10 Sep 2009US 2009/0224340 A1Osaka University
- Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity12 Feb 2009US 2009/0039345 A1NM Spintronics AB
- Ferromagneic Influence on Quantum Dots13 Nov 2008US 2008/0277645 A1ETeCH AG
- Spintronic devices with constrained spintronic dopant17 Jan 2008US 2008/0012004 A1Mears Technologies, Inc.
Most cited
By later US patents