Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity

Abstract

The invention provides a magnetic tunnel junction having a tunneling barrier layer wherein said tunneling barrier layer comprises a diluted magnetic semiconductor with spin sensitivity. The magnetic tunnel junction may according to the invention comprise a bottom lead coupled to a bottom electrode which is coupled to a diluted magnetic semiconductor coupled to a top electrode being coupled to a top lead, wherein said bottom electrode is non magnetic. The invention further provides various components and a computer, exploiting the magnetic tunnel junction according to the invention.

Dependencies are inferred from the claim text.