Ferromagnetic material
AssigneeSpintronix AB
InventorsParmanand Sharma, Kudumboor Venkat Rao, Börje Johansson, Rajeev Ahuja
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Abstract
A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The material is preferably sintered at a maximum temperature of 650° C. The result of this process is a semiconductor material comprising Mn-doped ZnO with a Mn concentration not exceeding 5 atomic percent, wherein the Mn-doped ZnO is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.
Claims20
A method for producing a ferromagnetic semiconductor material comprising Mn doped ZnO comprising the following steps:
- mixing appropriate amounts of ZnO and MnO2 powders forming a mixture in powder form, and,
- sintering said mixture at a maximum temperature of about 700° C., whereby Mn doped ZnO having a Mn concentration below 5 atomic % and which is ferromagnetic at least at one temperature in the range in temperature from 218 Kelvin to 425 Kelvin is obtained.
A method for producing a ferromagnetic semiconductor material comprising Mn doped ZnO comprising the following steps:
- providing a bulk material of Mn doped ZnO, and
- creating a thin film on said bulk material by means of Pulsed Laser deposition at a maximum temperature of 600° C. using said bulk material as target, whereby a thin film of Mn doped ZnO having a Mn concentration below 4 atomic % and which is ferromagnetic at least at one temperature in the range in temperature from 218 Kelvin to 425 Kelvin is obtained on said bulk material.
A method for producing a ferromagnetic semiconductor material comprising Mn doped ZnO comprising the following steps:
- producing said material by sputtering to a deposition substrate, simultaneously using two metallic targets of Zinc and Manganese, respectively;
- controlling the temperature on the deposition substrate to a maximum of 650° C.;
- and
- adjusting a sputtering energy on the Zinc and Manganese targets such that a resulting Manganese content in the 1-5 atomic % range is achieved, whereby Mn doped ZnO having a Mn concentration below 5 atomic % and which is ferromagnetic at least at one temperature in the range in temperature from 218 Kelvin to 425 Kelvin is obtained.
A method for producing a ferromagnetic semiconductor material comprising Mn doped ZnO comprising the steps of:
- producing said material by sputtering to a deposition substrate, using a sintered ZnO:Mn ceramic target;
- controlling the temperature on the deposition substrate to a maximum of 650° C.;
- and
- adjusting a sputtering energy on the target such that a resulting Manganese content in the 1-5 atomic % range is achieved, whereby Mn doped ZnO having a Mn concentration below 5 atomic % and which is ferromagnetic at least at one temperature in the range in temperature from 218 Kelvin to 425. Kelvin is obtained.
A ferromagnetic semiconductor material comprising Mn-doped ZnO wherein said Mn-doped ZnO has a Mn concentration not exceeding 5 atomic %, and is ferromagnetic within at least a part of the temperature range from about 218 Kelvin to about 425 Kelvin.
Dependencies are inferred from the claim text.