G11C 27/022
Using a magnetic memory element
Official title: {using a magnetic memory element}
G11C27/022 (Using a magnetic memory element) appears on 8 US grants and 3 published applications in this corpus.
Search patents in G11C- Granted patents
- 8
- Published applications
- 3
- Assignees
- 8
- Inventors
- 19
- Latest grant
- 22 Jul 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 2 | 1 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Programming analog memory elements in a neomorphic computing system22 Jul 2025US 12,366,881 B1National Technology & Engineering Solutions of Sandia, LLC
- Error recovery in magnetic random access memory after reflow soldering20 Apr 2021US 10,983,883 B2Spin Memory, Inc.
- Trimming MRAM sense amp with offset cancellation28 Jul 2020US 10,726,897 B1International Business Machines Corporation
- MRAM sense amplifier with second stage offset cancellation28 Jul 2020US 10,726,898 B1International Business Machines Corporation
- Power-saving reading of magnetic memory devices10 May 2005US 6,891,768 B2Hewlett-Packard Development Company, L. P.
- Error recovery in magnetic random access memory after reflow soldering1 Oct 2020US 2020/0310930 A1Spin Memory, Inc.
- Wideband track-and-hold amplifier19 Mar 2009US 2009/0072868 A1Samsung Electronics Co., Ltd.
- Power-saving reading of magnetic memory devices13 May 2004US 2004/0090852 A1Hewlett-Packard Development Company, L. P.
Most cited
By later US patents
- Power-saving reading of magnetic memory devices97US 6,891,768 B2Hewlett-Packard Development Company, L. P. · 2005
- Analog functional module using magnetoresistive memory technology23US 6,314,020 B1Motorola, Inc. · 2001
- Integrated, nonvolatile, high-speed analog random access memory16US 5,375,082 AThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration · 1994
- Sampling circuit and method therefor12US 4,245,169 AThe United States of America as represented by the Secretary of Commerce · 1981
- Trimming MRAM sense amp with offset cancellation6US 10,726,897 B1International Business Machines Corporation · 2020