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AssigneeThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration
InventorsRomney R. Katti, Jiin-Chuan Wu, Henry L. Stadler
Estimating the term…
This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magnetoresistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.
An analog memory cell for storing analog data, and reading out said analog data with an electronic readout circuit, the analog memory cell comprising:
An analog memory for the storing and reading out of analog data comprising:
Dependencies are inferred from the claim text.