G11C 11/23
Using electrostatic storage on a common layer
Official title: using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes {or William tubes}(G11C11/22 takes precedence)
G11C11/23 (Using electrostatic storage on a common layer) appears on 45 US grants and 11 published applications in this corpus.
Search patents in G11C- Granted patents
- 45
- Published applications
- 11
- Assignees
- 22
- Inventors
- 70
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 6 | 0 |
| 1978 | 9 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 3 |
| 2004 | 3 | 2 |
| 2005 | 1 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 1 | 2 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
| 2025 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Multilayered vertical spin-orbit torque devices30 Dec 2025US 12,512,137 B2Samsung Electronics Co., Ltd.
- Memory cells with capacitive logic based on electromechanically controlled variable-capacitance capacitors30 Mar 2021US 10,964,373 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Methods and circuitry for programming non-volatile resistive switches using varistors25 Feb 2020US 10,573,375 B1Intel Corporation
- Background auto-refresh apparatus and method for non-volatile memory array26 Apr 2016US 9,325,321 B2Microsemi SoC Corporation
- Method of manufacturing an emitter23 May 2006US 7,049,158 B2Hewlett-Packard Development Company, L. P.
- Multilayered vertical spin-orbit torque devices25 Jul 2024US 2024/0249759 A1Samsung Electronics Co., Ltd.
- Memory cell in capacitive logic12 Mar 2020US 2020/0082867 A1Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Methods and circuitry for programming non-volatile resistive switches using varistors5 Mar 2020US 2020/0075088 A1Intel Corporation
- Background Auto-refresh Apparatus and Method for Non-Volatile Memory Array18 Sep 2014US 2014/0269133 A1Microsemi SoC Corporation
- Integrated circuits, memory device, method of producing an integrated circuit, method of producing a memory device, memory module16 Aug 2007US 2007/0187744 A1
Most cited
By later US patents
- Mobile ion film memory50US 3,995,190 AButler, Binion, Rice, Cook & Knapp · 1976
- System for storing and retrieving information at the molecular level29US 4,032,901 A1977
- Electron beam accessed read-write-erase random access memory18US 4,213,192 A1980
- Method and apparatus for deep depletion read-out of MOS electron beam addressable memories14US 4,068,218 AMicro-Bit Corporation · 1978
- Mobile ion film memory14US 4,090,253 A1978