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US 12,512,137 B2Granted
Multilayered vertical spin-orbit torque devices
AssigneeSamsung Electronics Co., Ltd.
InventorsJaewoo Jeong, Dmytro Apalkov, Ikhtiar, Roman Chepulskyy
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Abstract
A magnetic memory device includes a spin-orbit interaction active core having a number of layers stacked along a longitudinal axis and a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core. The magnetic junction includes a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer.
Claims20
A magnetic memory device comprising:
- a spin-orbit interaction active core comprising a plurality of layers stacked along a longitudinal axis, the plurality of layers comprising a first layer and a second layer on the first layer;
- and
- a magnetic junction extending around the longitudinal axis and substantially surrounding at least a portion of the spin-orbit interaction active core, the magnetic junction comprising a free layer, a reference layer, and a tunnel barrier layer between the free layer and the reference layer,
- wherein the magnetic junction surrounds the first layer and the second layer.
1 more element
A method of manufacturing a magnetic memory device, the method comprising:
- forming a spin-orbit interaction active core by alternately depositing a first layer and a second layer into a plurality of layers stacked along a longitudinal axis;
- forming a magnetic junction extending around the longitudinal axis and substantially surrounding a portion of the spin-orbit interaction active core, comprising depositing, by atomic layer deposition, a free layer, a tunnel barrier layer on the free layer, and a reference layer on the tunnel barrier layer,
- wherein the magnetic junction surrounds the first layer and the second layer.
Dependencies are inferred from the claim text.