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US 2007/0187744 A1Published application
Integrated circuits, memory device, method of producing an integrated circuit, method of producing a memory device, memory module
OwnerFranz Kreuplinventor
Life of this patent
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Abstract
The invention relates to integrated circuits, a memory device, a method of producing an integrated circuit, a method of producing a memory device, and a memory module.
Claims26
An integrated circuit having a memory device, the memory device comprising:
- at least one electrically conductive layer formed in or on a substrate;
- at least one spacer formed on the substrate in such a way that the at least one electrically conductive layer is arranged alongside the at least one spacer;
- and
- at least one carbon layer formed at least over a partial region of the substrate, wherein the at least one carbon layer crosses the at least one electrically conductive layer;
- wherein the at least one carbon layer is at least partly formed on the at least one spacer in such a way that an interspace is formed between the at least one carbon layer and the at least one electrically conductive layer crossed by the at least one carbon layer;
- and
- wherein the at least one carbon layer is configured in such a way that it can be brought into contact with the at least one crossed electrically conductive layer.
4 more elements
A method of producing a memory device, the method comprising:
- forming at least one electrically conductive layer in or on a substrate;
- forming at least one spacer on the substrate in such a way that the at least one electrically conductive layer is arranged alongside the at least one spacer;
- and
- forming at least one carbon layer at least over a partial region of the substrate, wherein the at least one carbon layer crosses the at least one electrically conductive layer;
- wherein the at least one carbon layer is formed on the at least one spacer in such a way that an interspace is formed between the at least one carbon layer and the at least one electrically conductive layer crossed by the at least one carbon layer;
- and
- wherein the at least one carbon layer is configured in such a way that it can be brought into contact with the at least one crossed electrically conductive layer.
4 more elements
A memory module, comprising:
- a plurality of integrated circuits, wherein at least one integrated circuit of the plurality of integrated circuits comprises a memory device, the memory device comprising:
- at least one electrically conductive layer formed in or on a substrate;
- at least one spacer formed on the substrate in such a way that the at least one electrically conductive layer is arranged alongside the at least one spacer;
- wherein at least one carbon layer formed at least over a partial region of the substrate, the at least one carbon layer crosses the at least one electrically conductive layer;
- wherein the at least one carbon layer is at least partly formed on the at least one spacer in such a way that an interspace is formed between the at least one carbon layer and the at least one electrically conductive layer crossed by the at least one carbon layer;
- and
- wherein the at least one carbon layer is configured in such a way that it can be brought into contact with the at least one crossed electrically conductive layer.
4 more elements
Dependencies are inferred from the claim text.