C30B 13/18
The heating element being in contact with, or immersed in, the molten
Official title: the heating element being in contact with, or immersed in, the molten zone
C30B13/18 (The heating element being in contact with, or immersed in, the molten) appears on 15 US grants and 3 published applications in this corpus.
Search patents in C30B- Granted patents
- 15
- Published applications
- 3
- Assignees
- 8
- Inventors
- 25
- Latest grant
- 4 Sep 2018
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 2 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 1 | 1 |
| 2018 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Device for producing a mono-crystalline sheet of semiconductor material from a molten alloy held between at least two aperture elements4 Sep 2018US 10,066,312 B2International Business Machines Corporation
- Zone melting furnace thermal field with dual power heating function and heat preservation method24 Oct 2017US 9,797,062 B2Zhejiang Jingsheng M & E Co., Ltd
- Producing a mono-crystalline sheet of semiconductor material8 Nov 2016US 9,487,884 B2International Business Machines Corporation
- Method and apparatus for crystal ribbon growth20 Jul 1993US 5,229,083 A
- Edge-defined contact heater apparatus and method for floating zone crystal growth19 May 1992US 5,114,528 AWisconsin Alumni Research Foundation
- Producing a mono-crystalline sheet of semiconductor material12 Jan 2017US 2017/0009372 A1International Business Machines Corporation
- Zone melting furnace thermal field with dual power heating function and heat preservation method28 Apr 2016US 2016/0115619 A1Zhejiang Jingsheng M & E Co., Ltd
- Producing a mono-crystalline sheet7 Mar 2013US 2013/0058827 A1International Business Machines Corporation
Most cited
By later US patents
- Method of crystal ribbon growth13US 5,055,157 A1991
- Edge-defined contact heater apparatus and method for floating zone crystal growth13US 5,114,528 AWisconsin Alumni Research Foundation · 1992
- Method and apparatus for crystal ribbon growth11US 5,229,083 A1993
- Method for growing crystals7US 3,933,572 AThe United States of America as represented by the Secretary of the Air Force · 1976
- Resistor for the treatment of materials7US 4,906,821 ACommissariat A L' Energie Atomique · 1990