C30B 11/006
Controlling or regulating
Official title: {Controlling or regulating}
C30B11/006 (Controlling or regulating) appears on 98 US grants and 126 published applications in this corpus.
Search patents in C30B- Granted patents
- 98
- Published applications
- 126
- Assignees
- 95
- Inventors
- 333
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 3 |
| 2003 | 0 | 1 |
| 2004 | 1 | 1 |
| 2005 | 1 | 1 |
| 2006 | 2 | 2 |
| 2007 | 0 | 0 |
| 2008 | 2 | 1 |
| 2009 | 0 | 6 |
| 2010 | 3 | 4 |
| 2011 | 2 | 3 |
| 2012 | 0 | 8 |
| 2013 | 4 | 9 |
| 2014 | 4 | 8 |
| 2015 | 4 | 8 |
| 2016 | 10 | 13 |
| 2017 | 5 | 7 |
| 2018 | 10 | 3 |
| 2019 | 6 | 1 |
| 2020 | 2 | 8 |
| 2021 | 5 | 10 |
| 2022 | 3 | 4 |
| 2023 | 8 | 7 |
| 2024 | 5 | 5 |
| 2025 | 5 | 4 |
| 2026 | 4 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal22 Sep 2026US 12,742,259 B2Sumitomo Electric Industries, Ltd.
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Method for preparing a P-type ZrCoSb-based half-Heusler single crystal alloy with a chemical composition of ZrCoSb1-xSnx by vertical bridgman directional crystallization7 Apr 2026US 12,595,583 B2Dalian University of Technology
- Semi-insulating gallium arsenide single crystal, preparation method and growth device therefor24 Feb 2026US 12,559,856 B2Shanxi China Crystal Technologies Co., Ltd.
- Method and system for vertical gradient freeze 8 inch gallium arsenide substrates26 Aug 2025US 12,398,486 B2AXT, Inc.
- Apparatus and Method for Growing Multiple Crystals in a Single Furnace8 Oct 2026US 2026/0308799 A1Zhejiang University of Science and Technology
- Semi-insulating gallium arsenide single-crystal substrate, substrate with epitaxial layer, and method for manufacturing semi-insulating gallium arsenide single-crystal9 Jul 2026US 2026/0193811 A1Sumitomo Electric Industries, Ltd.
- Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant28 May 2026US 2026/0146367 A1AXT, Inc.
- Method for growing single crystal, method for producing semiconductor substrate, and semiconductor substrate14 May 2026US 2026/0132543 A1Novel Crystal Technology, Inc.
- Method for producing single crystal, single crystal, piezoelectric element, ultrasonic motor, optical device, vibration device, dust removal device, imaging device, ultrasonic probe, ultrasonic diagnostic device, ultrasonic diagnostic system, and electronic device2 Apr 2026US 2026/0096345 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles59US 6,706,959 B2Clean Venture 21 Corporation · 2004
- Growth of doped crystals21US 4,050,905 AThe Harshaw Chemical Company · 1977
- Method for selectively controlling lengths of nanowires20US 7,402,531 B1Hewlett-Packard Development Company, L. P. · 2008
- Process for the treatment of a liquid mass14US 4,546,811 ACommissariat A L' Energie Atomique · 1985
- System for the in-situ visualization of a solid liquid interface during crystal growth12US 5,037,621 AThe United States of America as represented by the Secretary of the Army · 1991