C30B 11/005
Single-crystal growth by normal freezing or freezing under temperature gradient: by irradiation
Official title: {by irradiation or electric discharge}
C30B11/005 (Single-crystal growth by normal freezing or freezing under temperature gradient: by irradiation) appears on 20 US grants and 31 published applications in this corpus.
Search patents in C30B- Granted patents
- 20
- Published applications
- 31
- Assignees
- 25
- Inventors
- 78
- Latest grant
- 18 Nov 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 3 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 3 |
| 2011 | 0 | 1 |
| 2012 | 0 | 1 |
| 2013 | 2 | 1 |
| 2014 | 2 | 2 |
| 2015 | 0 | 0 |
| 2016 | 0 | 4 |
| 2017 | 1 | 4 |
| 2018 | 2 | 0 |
| 2019 | 1 | 1 |
| 2020 | 2 | 2 |
| 2021 | 2 | 2 |
| 2022 | 2 | 1 |
| 2023 | 1 | 2 |
| 2024 | 0 | 2 |
| 2025 | 1 | 2 |
By publication year. Applications have been published since 2001.
Recent patents
- System and method for forming single crystal components using additive manufacturing tooling18 Nov 2025US 12,472,553 B2SingleX AB
- In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)15 Aug 2023US 11,725,300 B2Epir, Inc.
- Layered manufacturing of single crystal alloy components20 Sep 2022US 11,446,766 B2General Electric Company
- Internal relief void arrangement for casting system26 Apr 2022US 11,312,053 B2Honeywell International Inc.
- Method for growing β phase of gallium oxide ([β]-Ga2O3) single crystals from the melt contained within a metal crucible8 Jun 2021US 11,028,501 B2Forschungsverbund Berlin E.V.
- Crystal preparation devices and crystal preparation methods16 Oct 2025US 2025/0320624 A1Meishan Boya Advanced Materials Co., Ltd.
- Additively manufactured articles having a microstructure with a high gamma-prime volume fraction22 May 2025US 2025/0163811 A1Arcam AB
- Method for Manufacturing a Component by Means of Layered Construction8 Aug 2024US 2024/0263339 A1Friedrich-Alexander-Universität Erlangen-Nürnberg
- System and method for forming single crystal components using additive manufacturing tooling13 Jun 2024US 2024/0189896 A1SingleX AB
- Laser-based afterheating for crystal growth21 Sep 2023US 2023/0295832 A1Scidre Scientific Instruments Dresden GmbH
Most cited
By later US patents
- Method for forming a single crystal silicon layer13US 4,578,143 AUshio Denki Kabushiki Kaisha · 1986
- Single crystal processes and products10US 4,350,561 ASpire Corporation · 1982
- Process for forming polycrystalline silicon layer by laser crystallization5US 7,129,153 B2TPO Displays Corp. · 2006
- Material processing through optically transmissive slag3US 9,770,781 B2Siemens Energy, Inc. · 2017
- Additive manufacturing system utilizing an epitaxy process and method of operation2US 10,012,088 B2United Technologies Corporation · 2018