In-situ laser annealing of Te growth defects in CdZnTe (ilast-czt)
AssigneeEpir, Inc.
InventorsSushant Sonde, Yong Chang, Silviu Velicu
Life of this patent
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Abstract
In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement includes a laser mounted outside the chamber which radiates a beam of energy to locally melt precipitates and inclusions. The furnace includes a mechanism to position the laser vertically to, at or near the interface between the formed crystal and crystal melt material above the formed crystal. The crystal material can be CdZnTe.
Claims11
In a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, wherein the crystal is grown vertically through the heating zones, the improvement comprising:
- a laser mounted outside the chamber that radiates a beam of energy to locally melt precipitates and inclusions.
A method of growing crystals in a crystal growth furnace having an array of vertically arranged heaters to provide controlled heating zones within a chamber, and a crucible for holding crystal material, including the steps of:
- growing the crystal vertically through the heating zones;
- and
- radiating a beam of energy to locally melt precipitates and inclusions.
A method of growing crystals in a crystal growth furnace having heating zones and a crucible for holding crystal material, including the steps of:
- growing the crystal vertically through the heating zones;
- and
- radiating a beam of energy to locally melt precipitates and inclusions.
Dependencies are inferred from the claim text.