Process for forming polycrystalline silicon layer by laser crystallization
AssigneeTPO Displays Corp.
InventorChing-Wei Lin
Life of this patent
Estimating the term…
Abstract
A process for forming a polycrystalline silicon layer includes the following steps. Firstly, at least one seed is formed on a substrate. Then, an amorphous silicon layer is formed on the substrate and overlies the seed. Then, the amorphous silicon layer is irradiated with a laser to melt the amorphous silicon layer. Afterward, the molten amorphous silicon layer is recrystallized to form a polycrystalline silicon layer.
Claims16
A process for forming a polycrystalline silicon layer, comprising steps of:
- forming at least one seed made of amorphous silicon on a substrate;
- forming an amorphous silicon layer on said substrate, overlying said amorphous silicon seed;
- irradiating said amorphous silicon layer with a laser to melt said amorphous silicon layer;
- and
- recrystallizing said molten amorphous silicon layer to form a polycrystalline silicon layer;
- wherein said step of forming said at least one seed on said substrate comprises sub-steps of:
- forming an intermediate covering layer on said substrate;
- patterning said intermediate covering layer to define said intermediate covering layer as a specified pattern;
- forming an amorphous silicon spacer beside said specified pattern;
- and
- removing said specified pattern with said spacer remained.
A process for forming a polycrystalline silicon layer, comprising steps of:
- defining a first region and a second region on a surface of a substrate;
- forming an intermediate covering layer on said first region of said substrate;
- patterning said intermediate covering layer to define said intermediate covering layer as a specified pattern;
- forming an amorphous silicon spacer beside said specified pattern;
- removing said specified pattern with said spacer remained to form at least one seed on said first region of said substrate;
- forming an amorphous silicon layer on said first and said second regions of said substrate;
- irradiating said amorphous silicon layer with a laser to melt said amorphous silicon layer;
- and
- recrystallizing said molten amorphous silicon layer on said first region to form a polycrystalline silicon layer.
A process for fabricating a polycrystalline silicon layer, comprising steps of:
- providing a substrate;
- forming an intermediate covering layer on said substrate;
- patterning said intermediate covering layer to define said intermediate covering layer as a specified pattern;
- forming an amorphous silicon spacer beside said specified pattern;
- removing said specified pattern with said spacer remained to form at least one seed on said substrate;
- forming an amorphous silicon layer on said substrate, overlying said seed;
- irradiating said amorphous silicon layer with a laser to melt said amorphous silicon layer;
- and
- recrystallizing said molten amorphous silicon layer to form a polycrystalline silicon layer.
A process for forming a polycrystalline silicon layer, comprising steps of:
- defining a first region and a second region on a surface of a substrate;
- forming at least one seed on said first region of said substrate;
- forming an amorphous silicon layer on said first and said second regions of said substrate;
- irradiating said amorphous silicon layer on said first region and said second region with a laser to melt said amorphous silicon layer;
- and
- recrystallizing said molten amorphous silicon layer on said first region and said second region to form a polycrystalline silicon layer and a microcrystalline silicon layer, respectively.
Dependencies are inferred from the claim text.