C04B 2103/0097
Anion- and far-infrared-emitting materials
Official title: {Anion- and far-infrared-emitting materials}
C04B2103/0097 (Anion- and far-infrared-emitting materials) appears on 4 US grants and 7 published applications in this corpus.
Search patents in C04B- Granted patents
- 4
- Published applications
- 7
- Assignees
- 4
- Inventors
- 15
- Latest grant
- 14 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 0 | 1 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 1 |
| 2005 | 1 | 1 |
| 2006 | 1 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 2 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 1 | 0 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Composite member, and heat generation device, building member and light emitting device, each of which uses same14 Apr 2026US 12,600,673 B2Panasonic Intellectual Property Management Co., Ltd.
- Semiconductor integrated circuit device12 Dec 2006US 7,149,113 B2Renesas Technology Corp.
- Semiconductor integrated circuit device17 May 2005US 6,894,944 B2Renesas Technology Corp.
- Semiconductor integrated circuit device26 Aug 2003US 6,611,458 B2Hitachi, Ltd.
- Composite member, and heat generation device, building member and light emitting device, each of which uses same16 Jun 2022US 2022/0185737 A1Panasonic Intellectual Property Management Co., Ltd.
- Covering readiness indicator6 Jan 2022US 2022/0002195 A1Uzin Utz AG
- Covering readiness indicator4 Oct 2018US 2018/0282211 A1Uzin Utz AG
- Composite powder with a high efficiency of releasing anions, and its attached substance and manufacturing method12 Mar 2009US 2009/0065732 A1
- Semiconductor integrated circuit device14 Jul 2005US 2005/0152186 A1Renesas Technology Corp.
Most cited
By later US patents