Lumilog
Vallauris, FR· latest recorded location
Lumilog is named on 6 US grants and 6 published applications in this corpus. Its most frequent classification is C30B (Single-crystal growth).
- Granted patents
- 6
- Published applications
- 6
- Inventors
- 9
- Granted in 2026 so far
- 0
- Most recent grant
- 14 Jul 2009
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 1 | 1 |
| 2005 | 0 | 1 |
| 2006 | 1 | 2 |
| 2007 | 0 | 1 |
| 2008 | 2 | 0 |
| 2009 | 2 | 0 |
By publication year.
Technology areas
Share of 12 documents
- C30BSingle-crystal growth10
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered10
- H10HInorganic light-emitting semiconductor devices having potential barriers6
- H01SDevices using the process of light amplification by stimulated emission of radiation2
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by2
- Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests2
Recent patents
- Process for producing an epitalixal layer of galium nitride14 Jul 2009US 7,560,296 B2
- Method for epitaxial growth of a gallium nitride film separated from its substrate10 Feb 2009US 7,488,385 B2
- Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density25 Nov 2008US 7,455,729 B2
- Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof4 Nov 2008US 7,445,673 B2
- Process for producing an epitaxial layer of gallium nitride10 Oct 2006US 7,118,929 B2
- Process for producing an epitalixal layer of galium nitride29 Mar 2007US 2007/0072320 A1
- Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof30 Nov 2006US 2006/0266281 A1
- Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density11 May 2006US 2006/0099781 A1
- Method for epitaxial growth of a gallium nitride film separated from its substrate6 Oct 2005US 2005/0217565 A1
- Process for producing an epitaxial layer of gallium nitride15 Jul 2004US 2004/0137732 A1
Most cited
By later US patents
- Process for producing an epitaxial layer of gallium nitride46US 6,802,902 B22004
- Process for producing an epitaxial layer of gallium nitride28US 7,118,929 B22006
- Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof11US 7,445,673 B22008
- Method for epitaxial growth of a gallium nitride film separated from its substrate11US 7,488,385 B22009
- Method for producing by vapour-phase epitaxy a gallium nitride film with low defect density4US 7,455,729 B22008