Method for epitaxial growth of a gallium nitride film separated from its substrate
AssigneeLumilog
InventorsHacène Lahreche, Gilles Nataf, Bernard Beaumont
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Abstract
The invention concerns the preparation of gallium nitride films by epitaxy with reduced defect density levels. It concerns a method for producing a gallium nitride (GaN) film by epitaxial deposition of GaN. The invention is characterized in that it comprises at least a step of epitaxial lateral overgrowth and in that it comprises a step which consists in separating part of the GaN layer from its substrate by embrittlement through direct ion implantation in the GaN substrate. The invention also concerns the films obtainable by said method as well as the optoelectronic and electronic components provided with said gallium nitride films.
Claims15
A method of producing a self-supported film of gallium nitride (GaN) using a substrate, by deposition of GaN by epitaxy, the method comprising the following successive steps:
- (i) depositing a layer of GaN on a substrate by vapour or liquid phase epitaxy,
- (ii) a weakening ion implantation step so as to create a weak area in the layer of GaN deposited during the previous step,
- (iii) a step of reworking by epitaxial lateral overgrowth (ELO) in order to form a new layer of GaN, and
- (iv) a spontaneous separation step at the weak area to obtain the self-supported film of gallium nitride, wherein the spontaneous separation at the weak area is implemented by return to ambient temperature after the resumption of epitaxy.
Dependencies are inferred from the claim text.