Y10S 977/76
Superlattice with graded effective bandgap
Official title: Superlattice with graded effective bandgap, e.g. "chirp-graded" superlattice
Y10S977/76 (Superlattice with graded effective bandgap) appears on 34 US grants and 13 published applications in this corpus.
Search patents in Y10S- Granted patents
- 34
- Published applications
- 13
- Assignees
- 18
- Inventors
- 47
- Latest grant
- 11 Jul 2017
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 7 | 1 |
| 2002 | 4 | 1 |
| 2003 | 2 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 2 |
| 2006 | 1 | 1 |
| 2007 | 2 | 1 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 1 | 1 |
| 2011 | 2 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 3 |
| 2017 | 3 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Tunable voltage margin access diodes11 Jul 2017US 9,705,079 B2International Business Machines Corporation
- Tunable voltage margin access diodes13 Jun 2017US 9,680,096 B2International Business Machines Corporation
- Tunable voltage margin access diodes9 May 2017US 9,647,210 B2International Business Machines Corporation
- Tunable voltage margin access diodes29 Nov 2016US 9,508,930 B2International Business Machines Corporation
- Multilayered film-nanowire composite, bifacial, and tandem solar cells12 Jul 2011US 7,977,568 B2General Electric Company
- Tunable voltage margin access diodes16 Feb 2017US 2017/0047515 A1International Business Machines Corporation
- Tunable voltage margin access diodes27 Oct 2016US 2016/0315254 A1International Business Machines Corporation
- Tunable voltage margin access diodes29 Sep 2016US 2016/0284870 A1International Business Machines Corporation
- Tunable voltage margin access diodes29 Sep 2016US 2016/0284995 A1International Business Machines Corporation
- Superlattice nanopatterning of wires and complex patterns14 Oct 2010US 2010/0258785 A1California Institute of Technology
Most cited
By later US patents
- Light emitting semiconductor device1,509US 7,265,374 B2Arima Computer Corporation · 2007
- High electron mobility transistor with GaN/Al.sub.x Ga.sub.1-x N heterojunctions298US 5,192,987 AAPA Optics, Inc. · 1993
- Method of making a high electron mobility transistor204US 5,296,395 AAPA Optics, Inc. · 1994
- Method of solubilizing shortened single-walled carbon nanotubes in organic solutions107US 6,331,262 B1University of Kentucky Research Foundation · 2001
- Semiconductor device33US 4,620,206 AAgency of Industrial Science and Technology · 1986