H10F 77/1228
Porous silicon
Official title: {porous silicon}
H10F77/1228 (Porous silicon) appears on 59 US grants and 87 published applications in this corpus.
Search patents in H10F- Granted patents
- 59
- Published applications
- 87
- Assignees
- 62
- Inventors
- 191
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 1 |
| 2004 | 0 | 1 |
| 2005 | 1 | 0 |
| 2006 | 0 | 2 |
| 2007 | 1 | 3 |
| 2008 | 0 | 4 |
| 2009 | 0 | 2 |
| 2010 | 2 | 5 |
| 2011 | 0 | 0 |
| 2012 | 4 | 7 |
| 2013 | 0 | 4 |
| 2014 | 4 | 2 |
| 2015 | 5 | 1 |
| 2016 | 1 | 8 |
| 2017 | 3 | 4 |
| 2018 | 2 | 7 |
| 2019 | 7 | 9 |
| 2020 | 6 | 4 |
| 2021 | 3 | 4 |
| 2022 | 4 | 3 |
| 2023 | 4 | 5 |
| 2024 | 3 | 6 |
| 2025 | 4 | 3 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Image sensor with a high absorption layer28 Apr 2026US 12,615,861 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Lead salt thin films, devices, and methods of manufacture30 Sep 2025US 12,433,057 B2The Board of Regents of the University of Oklahoma
- Single-photon avalanche photodiode3 Jun 2025US 12,324,250 B2STMicroelectronics (Crolles 2) SAS
- Microstructure enhanced absorption photosensitive devices4 Mar 2025US 12,243,948 B2W&W Sens Devices, Inc.
- Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system4 Feb 2025US 12,218,258 B2Solarlab Aiko Europe GmbH
- Image sensor with a high absorption layer6 Aug 2026US 2026/0231543 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device, manufacturing method therefor, and electronic apparatus17 Jul 2025US 2025/0234665 A1Sony Semiconductor Solutions Corporation
- Doped region structure and solar cell comprising the same, cell assembly, and photovoltaic system8 May 2025US 2025/0151454 A1Solarlab Aiko Europe GmbH
- Lenses and methods of manufacturing the same27 Mar 2025US 2025/0107268 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Microstructure enhanced absorption photosensitive devices26 Dec 2024US 2024/0429332 A1W&W Sens Devices, Inc.
Most cited
By later US patents
- Porous silicon photo-device capable of photoelectric conversion53US 5,644,156 AKabushiki Kaisha Toshiba · 1997
- Laterally stacked Schottky diodes for infrared sensor applications27US 4,990,988 AThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration · 1991
- Methods of making energy conversion devices with a substantially contiguous depletion regions23US 7,250,323 B2BetaBatt, Inc. · 2007
- Microstructure enhanced absorption photosensitive devices23US 9,496,435 B2W&Wsens Devices, Inc. · 2016
- Infrared sensor unit and process of fabricating the same18US 7,709,795 B2Panasonic Electric Works Co., Ltd. · 2010