Back to results
US 5,644,156 AGranted
Porous silicon photo-device capable of photoelectric conversion
AssigneeKabushiki Kaisha Toshiba
InventorsTaketoshi Suzuki, Tadashi Sakai, Li Zhang, Taijun Murakami
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 .mu.m thick formed on the expanded surfaces of the porous silicon layer, wherein said expanded surfaces include internal surface of said pores.
Claims9
A semiconductor device comprising:
- a porous silicon layer made from single crystalline silicon as a base with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed;
- and
- a thermal oxide film of 0.01 to 10 .mu.m thickness, formed on expanded surfaces of said porous silicon layer, said expanded surfaces including internal surfaces of said pores.
A semiconductor device comprising:
- a silicon substrate having a major surface;
- a first porous silicon layer of a first conductivity type with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, which is formed on the major surface of said silicon substrate, and in which a plurality of pores are formed;
- a second porous silicon layer of a second conductivity type with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, in which a plurality of pores are formed and which are formed on said first silicon layer to form a p-n junction with said first silicon layer;
- and
- a thermal oxide film 0.01 to 10 .mu.m thick formed on expanded surfaces of said first and said second porous silicon layers said expanded surfaces including internal surfaces of said pores;
- and
- an electrode selectively formed on said second porous silicon layer of the second conductivity type.
4 more elements
A semiconductor device comprising:
- a substrate having a major surface;
- a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, which is formed on the major surface of said silicon substrate, and in which a plurality of pores are formed;
- a thermal oxide film 0.01 to 10 .mu.m thick formed on expanded surfaces of said porous silicon layer, said expanded surfaces including internal surfaces of said pores;
- and
- an electrode selectively formed on said porous silicon layer, in order to form an ohmic junction with said porous silicon layer.
2 more elements
A semiconductor device comprising:
- a substrate having a major surface;
- a porous silicon layer with an impurity concentration of 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3, which is formed on the major surface of said silicon substrate, and in which a plurality of pores are formed;
- a thermal oxide film 0.01 to 10 .mu.m thick formed on expanded surfaces of said porous silicon layer said expanded surfaces including internal surfaces of said pores;
- and
- an electrode selectively formed on said porous silicon layer, in order to form a Schottky junction with said porous silicon layer.
2 more elements
Dependencies are inferred from the claim text.