Laterally stacked Schottky diodes for infrared sensor applications
AssigneeThe United States of America as represented by the Administrator of the National Aeronautics and Space Administration
InventorTrue-Lon Lin
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Abstract
Laterally stacked Schottky diodes (25) for infrared sensor applications are fabricated utilizing porous silicon (10) having pores (12). A Schottky metal contact (24) is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility.
Claims6
An infrared sensor comprising a plurality of laterally stacked Schottky diodes, each diode comprising a Schottky barrier metal formed in an opening in a silicon substrate, each said opening having a diameter ranging from about 50 to 200 .ANG. and a depth ranging from about 1 to more than 100 .mu.m.
Dependencies are inferred from the claim text.