H10F 30/2205
The potential barrier being a point contact
Official title: {the potential barrier being a point contact}
H10F30/2205 (The potential barrier being a point contact) appears on 5 US grants and 6 published applications in this corpus.
Search patents in H10F- Granted patents
- 5
- Published applications
- 6
- Assignees
- 6
- Inventors
- 16
- Latest grant
- 5 Apr 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 2 |
| 2012 | 1 | 1 |
| 2013 | 1 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 0 |
| 2022 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors5 Apr 2022US 11,295,962 B2The Board of Trustees of the Leland Stanford Junior University
- Rectifying antenna device with nanostructure diode28 Apr 2015US 9,018,616 B2Ramot at Tel-Aviv University Ltd.
- Gain-clamped semiconductor optical amplifiers22 Jan 2013US 8,357,926 B2Hewlett-Packard Development Company, L. P.
- Nanowire-based opto-electronic device3 Jul 2012US 8,212,235 B2Hewlett-Packard Development Company, L. P.
- Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures23 Nov 1999US 5,989,947 AMax-Planck-Geselleschaft Zur
- Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors16 Jan 2020US 2020/0020543 A1The Board of Trustees of the Leland Stanford Junior
- Rectifying antenna device with nanostructure diode13 Aug 2015US 2015/0229165 A1Ramot at Tel-Aviv University Ltd.
- Gain-clamped semiconductor optical amplifiers27 Sep 2012US 2012/0243075 A1Hewlett-Packard Development Company, L. P.
- Nanowire-based opto-electronic device13 Oct 2011US 2011/0249322 A1Hewlett-Packard Development Company, L. P.
- Rectifying antenna device with nanostructure diode26 May 2011US 2011/0121258 A1Ramot at Tel-Aviv University Ltd.
Most cited
By later US patents
- Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures28US 5,989,947 AMax-Planck-Geselleschaft Zur · 1999
- Nanowire-based opto-electronic device12US 8,212,235 B2Hewlett-Packard Development Company, L. P. · 2012
- Rectifying antenna device with nanostructure diode5US 9,018,616 B2Ramot at Tel-Aviv University Ltd. · 2015
- Gain-clamped semiconductor optical amplifiers4US 8,357,926 B2Hewlett-Packard Development Company, L. P. · 2013