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US 8,212,235 B2Granted
Nanowire-based opto-electronic device
AssigneeHewlett-Packard Development Company, L.P.
InventorsShih-Yuan Wang, M. Saif Islam, Philip J. Kuekes, Nobuhiko Kobayashi
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Abstract
Nanowire-based opto-electronic devices including nanowire lasers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by a signal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires that can provide different polarizations.
Claims8
A nanowire-based opto-electronic device, comprising:
- a main substrate;
- a first protrusion including a first insulating layer formed on the main substrate and a first crystal material layer formed on the first insulating layer, wherein the first crystal material layer is isolated from the main substrate by the first insulating layer and includes at least one first surface;
- a second protrusion including a second insulating layer formed on the main substrate and a second crystal material layer formed on the second insulating layer, wherein the second crystal material layer is isolated from the main substrate by the second insulating layer and includes at least one second surface, each second surface being electrically isolated from a respective first surface;
- and
- at least one first nanowire connecting at least one opposing first pair of the first and second surfaces in a bridging configuration, wherein the first nanowire is grown from the first and second surfaces, and interconnects between the first and second surfaces, of the first pair of the first and second surfaces.
2 more elements
Dependencies are inferred from the claim text.