Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors
AssigneeThe Board of Trustees of the Leland Stanford Junior
InventorsChristopher J. Kenney, Julie D. Segal
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Abstract
Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.
Claims19
A method of making a radiation detector, the method comprising:
- providing a semiconductor substrate;
- fabricating first electronic circuitry on a first side of the semiconductor substrate, wherein the first electronic circuitry includes at least a first diode termination;
- backside ion implanting one or more dopant species to provide a backside ion implant on a second side of the semiconductor substrate opposite the first side of the semiconductor substrate;
- activating the backside ion implant with a microwave annealing process to form a second diode termination, whereby a diode structure extending from the first diode termination to the second diode termination is formed;
- wherein the activating the backside ion implant is performed after the fabricating first electronic circuitry;
- wherein the diode structure is fully depleted in operation such that radiation absorbed in the semiconductor substrate generates electron-hole pairs to provide a radiation detector output signal from the diode structure.
A method of making a radiation detector, the method comprising:
- providing a semiconductor substrate;
- fabricating first electronic circuitry on a first side of the semiconductor substrate, wherein the first electronic circuitry includes at least a first diode termination;
- frontside ion implanting one or more dopant species to provide a frontside ion implant on the first side of the semiconductor substrate;
- activating the frontside ion implant with a microwave annealing process to form a second diode termination, whereby a diode structure extending from the first diode termination to the second diode termination is formed;
- wherein the activating the frontside ion implant is performed after the fabricating first electronic circuitry;
- wherein radiation absorbed in the semiconductor substrate between the first and second diode terminations generates electron-hole pairs to provide a radiation detector output signal from the diode structure.
Dependencies are inferred from the claim text.