Method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers as well as components with such quantum structures

A method for the manufacture of quantum structures, in particular quantum dots and tunnel barriers, wherein a substrate is structured by the intentional formation of adjoining trench regions of differing width, with a transition from a broader region to a narrower region;

• wherein a further material is deposited onto the substrate, so that a differential growth arises in the trench regions of the substrate, with an inclined surface arising in the transition region between the broader region and the narrower region and an increase in material height arising in the narrower region relative to the broader region;
• and wherein a different material is subsequently deposited, whereby a tunnel barrier arises on the inclined surface and/or a quantum dot arises at the upper end of the inclined surface.

A method of forming a quantum wire by forming a step having an edge on a substrate, epitaxially growing at least one layer of further material on the structured substrate followed by a layer of another material or a layer of a material with different conductivity, whereby an inclined surface in the form of a facet arises on the top of said step extending away from said edge, due to a surface diffusion, and a quantum wire extending parallel to said edge forms at the upper end of said inclined surface.