H01S 5/2095
Using melting or mass transport
Official title: {using melting or mass transport}
H01S5/2095 (Using melting or mass transport) appears on 11 US grants and 8 published applications in this corpus.
Search patents in H01S- Granted patents
- 11
- Published applications
- 8
- Assignees
- 8
- Inventors
- 26
- Latest grant
- 6 Aug 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 1 | 2 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 2 | 1 |
| 2015 | 0 | 0 |
| 2016 | 1 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 1 |
| 2022 | 1 | 0 |
| 2023 | 1 | 1 |
| 2024 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Surface-emitting laser device and method for manufacturing surface-emitting laser device6 Aug 2024US 12,057,678 B2Kyoto University
- Surface-emitting laser device and method for manufacturing surface-emitting laser device6 Jun 2023US 11,670,910 B2Kyoto University
- Surface-emitting laser and method for manufacturing surface-emitting laser22 Mar 2022US 11,283,243 B2Kyoto University
- Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method6 Sep 2016US 9,437,684 B2Canon Kabushiki Kaisha
- Process for producing semiconductor device and semiconductor device23 Sep 2014US 8,842,710 B2Canon Kabushiki Kaisha
- Surface-emitting laser device and method for manufacturing surface-emitting laser device7 Sep 2023US 2023/0283049 A1Kyoto University
- Surface-emitting laser device and method for manufacturing surface-emitting laser device17 Jun 2021US 2021/0184431 A1Kyoto University
- Surface-emitting laser and method for manufacturing surface-emitting laser6 Aug 2020US 2020/0251887 A1Kyoto University
- Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method6 Nov 2014US 2014/0327015 A1Canon Kabushiki Kaisha
- Method of producing microstructure of nitride semiconductor and photonic crystal prepared according to the method29 Sep 2011US 2011/0237077 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices158US 6,447,604 B1Advanced Technology Materials, Inc. · 2002
- GaInAsP/InP Double-heterostructure lasers42US 4,468,850 AMassachusetts Institute of Technology · 1984
- Process for making a mesa GaInAsP/InP distributed feedback laser15US 4,777,148 AMassachusetts Institute of Technology · 1988
- Surface-emitting laser device and method for manufacturing surface-emitting laser device2US 11,670,910 B2Kyoto University · 2023
- Mass transport of indium phosphide2US 4,717,443 AStandard Telephones and Cables, PLC · 1988