H01S 5/0021
Degradation or life time measurements
Official title: {Degradation or life time measurements}
H01S5/0021 (Degradation or life time measurements) appears on 263 US grants and 273 published applications in this corpus.
Search patents in H01S- Granted patents
- 263
- Published applications
- 273
- Assignees
- 146
- Inventors
- 641
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 3 | 0 |
| 1992 | 2 | 0 |
| 1993 | 1 | 0 |
| 1994 | 2 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 2 | 0 |
| 1998 | 6 | 0 |
| 1999 | 1 | 0 |
| 2000 | 3 | 0 |
| 2001 | 4 | 2 |
| 2002 | 4 | 7 |
| 2003 | 7 | 15 |
| 2004 | 7 | 11 |
| 2005 | 10 | 18 |
| 2006 | 10 | 9 |
| 2007 | 5 | 19 |
| 2008 | 4 | 16 |
| 2009 | 5 | 13 |
| 2010 | 33 | 23 |
| 2011 | 10 | 7 |
| 2012 | 17 | 18 |
| 2013 | 17 | 10 |
| 2014 | 7 | 6 |
| 2015 | 9 | 8 |
| 2016 | 9 | 5 |
| 2017 | 10 | 15 |
| 2018 | 5 | 9 |
| 2019 | 15 | 9 |
| 2020 | 5 | 9 |
| 2021 | 4 | 14 |
| 2022 | 7 | 10 |
| 2023 | 7 | 9 |
| 2024 | 10 | 5 |
| 2025 | 3 | 2 |
| 2026 | 7 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Nitride-based semiconductor light-emitting element and manufacturing method thereof28 Apr 2026US 12,615,885 B2Nuvoton Technology Corporation Japan
- Method of manufacturing vertical-cavity surface-emitting laser element14 Apr 2026US 12,603,479 B2Nichia Corporation
- Method of controlling an optical output power of a laser diode, control device and system31 Mar 2026US 12,592,541 B2Robert Bosch GmbH
- VCSEL with protrusion having inclined side walls formed in p-side semiconductor layer10 Mar 2026US 12,573,818 B2Nichia Corporation
- Optical module having multiple laser diode devices and a support member3 Mar 2026US 12,566,296 B2KYOCERA SLD Laser, Inc.
- Nitride-based semiconductor light-emitting element and manufacturing method thereof13 Aug 2026US 2026/0239778 A1Nuvoton Technology Corporation Japan
- System and method for testing optical receivers11 Jun 2026US 2026/0160794 A1Mellanox Technologies, Ltd.
- Semiconductor laser element2 Apr 2026US 2026/0095018 A1Nichia Corporation
- Semiconductor light-emitting element12 Mar 2026US 2026/0074484 A1Nuvoton Technology Corporation Japan
- Performance estimation method, and training method6 Nov 2025US 2025/0342342 A1Gigaphoton Inc.
Most cited
By later US patents
- Process for passivating semiconductor laser structures with severe steps in surface topography156US 5,851,849 ALucent Technologies Inc. · 1998
- Heterostructure laser with lattice mismatch96US 5,048,036 ASpectra Diode Laboratories, Inc. · 1991
- Method and apparatus for extending and confirming the service life of semiconductor laser of bar code reader by detecting current increase corresponding to temperature of semiconductor laser94US 5,334,826 AFujitsu Limited · 1994
- Smart laser diode array assembly and operating method using same71US 5,734,672 ACutting Edge Optronics, Inc. · 1998
- Laser diode junction temperature compensation61US 8,605,764 B1Microvision, Inc. · 2013