H01J 2329/0413
Microengineered point emitters
H01J2329/0413 (Microengineered point emitters) appears on 9 US grants and 11 published applications in this corpus.
Search patents in H01J- Granted patents
- 9
- Published applications
- 11
- Assignees
- 10
- Inventors
- 41
- Latest grant
- 10 Sep 2013
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1999 | 1 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 2 |
| 2010 | 0 | 0 |
| 2011 | 2 | 5 |
| 2012 | 3 | 2 |
| 2013 | 2 | 1 |
By publication year. Applications have been published since 2001.
Subgroups
Granted patents
Recent patents
- Room temperature silicon-compatible LED/laser with electrically pumped field emission device10 Sep 2013US 8,530,907 B2Photonic Systems, Inc.
- Self assembly of field emission tips by capillary bridge formations30 Apr 2013US 8,430,705 B1Palo Alto Research Center Incorporated
- Ion source having secondary electron enhancing electrode28 Aug 2012US 8,253,314 B2Hon Hai Precision Industry Co., Ltd.
- Field emission cathode device and display using the same21 Aug 2012US 8,247,961 B2Hon Hai Precision Industry Co., Ltd.
- Field emission display device28 Feb 2012US 8,125,135 B2Nanopacific Inc.
- Self assembly of field emission tips by capillary bridge formations9 May 2013US 2013/0115846 A1Palo Alto Research Center Incorporated
- Ion source12 Jan 2012US 2012/0007490 A1Hon Hai Precision Industry Co., Ltd.
- Room Temperature Silicon-Compatible LED/Laser with Electrically Pumped Field Emission Device5 Jan 2012US 2012/0001543 A1Photonic Systems, Inc.
- Field emission cathode device and display using the same15 Dec 2011US 2011/0304260 A1Hon Hai Precision Industry Co., Ltd.
- Electron emitting device, image display apparatus using the same, radiation generation apparatus, and radiation imaging system15 Dec 2011US 2011/0305314 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Method for manufacturing a cathode tip of electric field emission device12US 6,069,018 AElectronics and Telecommunications Research Institute · 2000
- Method of forming a lift-off layer having controlled adhesion strength3US 5,944,975 ATexas Instruments Incorporated · 1999
- Field emission cathode device and display using the same2US 8,030,837 B2Hon Hai Precision Industry Co., Ltd. · 2011
- Room temperature silicon-compatible LED/laser with electrically pumped field emission device2US 8,530,907 B2Photonic Systems, Inc. · 2013
- Ion source having secondary electron enhancing electrode1US 8,253,314 B2Hon Hai Precision Industry Co., Ltd. · 2012