Method for manufacturing a cathode tip of electric field emission device
AssigneeElectronics and Telecommunications Research Institute
InventorsYoon-Ho Song, Jin Ho Lee, Kyoung Ik Cho
Life of this patent
Estimating the term…
Abstract
A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.
Claims5
A method for manufacturing a cathode tip of an electric field emission device, comprising the steps of:
- sequentially depositing a conductive layer and an undoped silicon layer on an insulator substrate;
- forming a tip-mask pattern on a selected portion of said undoped silicon layer;
- sequentially performing an isotropic etching process and an anisotropic etching process so that said undoped silicon layer is etched into a cone-like shape;
- removing said tip-mask pattern;
- implanting impurity ions into a portion of said undoped silicon layer;
- and
- removing the ion implanted silicon layer by means of a wet etching process.
Dependencies are inferred from the claim text.