G11C 2207/066
Frequency reading type sense amplifier
G11C2207/066 (Frequency reading type sense amplifier) appears on 17 US grants and 17 published applications in this corpus.
Search patents in G11C- Granted patents
- 17
- Published applications
- 17
- Assignees
- 13
- Inventors
- 20
- Latest grant
- 23 Nov 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2004 | 0 | 1 |
| 2005 | 2 | 3 |
| 2006 | 2 | 2 |
| 2007 | 1 | 0 |
| 2008 | 1 | 2 |
| 2009 | 1 | 0 |
| 2010 | 1 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 1 |
| 2013 | 1 | 1 |
| 2014 | 1 | 1 |
| 2015 | 0 | 0 |
| 2016 | 2 | 3 |
| 2017 | 1 | 0 |
| 2018 | 1 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 0 |
| 2021 | 2 | 1 |
By publication year.
Recent patents
- Memory device and control method thereof23 Nov 2021US 11,183,244 B2Winbond Electronics Corp.
- Analog current memory with droop compensation8 Jun 2021US 11,031,090 B1Omni Design Technologies Inc.
- Electronic device and method for operating electronic device9 Jan 2018US 9,865,344 B2SK hynix Inc.
- Semiconductor device including memory cell and sense amplifer, and IC card including semiconductor device10 Jan 2017US 9,543,007 B2Panasonic Intellectual Property Management Co., Ltd.
- Apparatus and method for reading a storage device with a ring oscillator and a time-to-digital circuit6 Dec 2016US 9,514,812 B2Hewlett Packard Enterprise Development LP
- Memory device and control method thereof4 Mar 2021US 2021/0065804 A1Winbond Electronics Corp.
- Semiconductor device including memory cell and sense amplifer, and ic card including semiconductor device15 Dec 2016US 2016/0365140 A1Panasonic Intellectual Property Management Co., Ltd.
- Electronic device and method for operating electronic device27 Oct 2016US 2016/0314835 A1SK hynix Inc.
- Apparatus and method for storage device reading11 Feb 2016US 2016/0042787 A1Hewlett-Packard Devlopment Company, L.P.
- Electronic device and method for operating electronic device28 Aug 2014US 2014/0244945 A1SK hynix Inc.
Most cited
By later US patents
- Integrated charge sensing scheme for resistive memories45US 6,870,784 B2Micron Technology, Inc. · 2005
- Integrated charge sensing scheme for resistive memories44US 6,901,020 B2Micron Technology, Inc. · 2005
- Integrated charge sensing scheme for resistive memories10US 7,151,698 B2Micron Technology, Inc. · 2006
- Simultaneous read circuit for multiple memory cells7US 7,366,030 B2Micron Technology, Inc. · 2008
- Simultaneous read circuit for multiple memory cells6US 7,609,563 B2Micron Technology, Inc. · 2009