G11C 19/0833
Using magnetic domain interaction
Official title: {using magnetic domain interaction}
G11C19/0833 (Using magnetic domain interaction) appears on 39 US grants and 18 published applications in this corpus.
Search patents in G11C- Granted patents
- 39
- Published applications
- 18
- Assignees
- 22
- Inventors
- 78
- Latest grant
- 12 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 8 | 0 |
| 1977 | 7 | 0 |
| 1978 | 2 | 0 |
| 1979 | 3 | 0 |
| 1980 | 2 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 1 | 3 |
| 2015 | 1 | 2 |
| 2016 | 3 | 0 |
| 2017 | 0 | 2 |
| 2018 | 2 | 0 |
| 2019 | 0 | 0 |
| 2020 | 2 | 4 |
| 2021 | 2 | 3 |
| 2022 | 1 | 1 |
| 2023 | 2 | 0 |
| 2024 | 1 | 0 |
| 2025 | 0 | 1 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Magnetic memory and memory system12 May 2026US 12,626,775 B2Kioxia Corporation
- Magnetic memory devices having multiple magnetic layers therein19 Mar 2024US 11,935,573 B2Samsung Electronics Co., Ltd.
- Magnetic storage device13 Jun 2023US 11,676,677 B2Kioxia Corporation
- Magnetoresistance effect element and Heusler alloy14 Feb 2023US 11,581,365 B2TDK Corporation
- Magnetic memory devices having multiple magnetic layers therein31 May 2022US 11,348,626 B2Samsung Electronics Co., Ltd.
- Magnetic memory and memory system16 Jan 2025US 2025/0022498 A1Kioxia Corporation
- Magnetic memory devices having multiple magnetic layers therein18 Aug 2022US 2022/0262419 A1Samsung Electronics Co., Ltd.
- Magnetic storage device4 Nov 2021US 2021/0343356 A1Toshiba Memory Corporation
- Magnetic memory devices having multiple magnetic layers therein18 Feb 2021US 2021/0050044 A1Samsung Electronics Co., Ltd.
- Magnetoresistance effect element and heusler alloy11 Feb 2021US 2021/0043682 A1TDK Corporation
Most cited
By later US patents
- Magnetic bubble multilayer arrangement17US 4,151,602 AU. S. Philips Corporation · 1979
- Double layer bubble domain lattice system13US 3,996,571 AInternational Business Machines Corporation · 1976
- Magnetic-domain-wall-displacement memory cell and initializing method therefor12US 9,478,309 B2NEC Corporation · 2016
- Wall topology storage system9US 3,940,750 AInternational Business Machines Corporation · 1976
- Hard-magnetic film overlay apparatus and method for magnetic mobile domain control8US 3,982,234 AInternational Business Machines Corporation · 1976